HITACHI PF0030 Datasheet

PF0030 Series

MOS FET Power Amplifier

ADE-208-460 (Z) 1st Edition July 1996

Features

•High stability: Load VSWR = 20 : 1

•Low power control current: 400 A

•Thin package: 5 mmt

Ordering Information

Type No	Operating Frequency	Application
PF0030	824 to 849 MHz	AMPS
PF0032	872 to 905 MHz	E-TACS

Pin Arrangement

∙ RF-B2		5
			1: Pin
		4	2: VAPC
	3		3: VDD
			4: Pout
5	2		5: GND
	1

PF0030 Series

Internal Diagram and External Circuit

G						G
GND						GND
Pin1		Pin2		Pin3		Pin4
Pin		VAPC		VDD		Pout
Z1	C1	FB1	C3	FB2	C2	Z2
Pin		VAPC		VDD		Pout
C1 = C2 = 0.01 μF (Ceramic chip capacitor)
C3 = 10 μF (Aluminum Electrolyte Capacitor)
FB = Ferrite bead BL01RN1-A62-001 (Manufacture: MURATA) or equivalent
Z1 = Z2 = 50 Ω (Microstrip line)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

17

V

Supply current

IDD

3

A

APC voltage

VAPC

±8

V

Input power

Pin

20

mW

Operating case temperature

Tc (op)

–30 to +110

°C

Storage temperature

Tstg

–40 to +110

°C

2

PF0030 Series

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit		Test Condition
Drain cutoff current	IDS	—	—	500	µA		VDD = 17 V, VAPC = 0 V
Total efficiency	ηT	35	40	—	%	Pin = 2 mW,
2nd harmonic distortion	2nd H.D.	—	–50	–30	dB	V DD = 12.5 V,
3rd harmonic distortion	3rd H.D.	—	–50	–30	dB	Pout = 6 W (at APC controlled)
								Ω
Input VSWR	VSWR (in)	—	1.5	3	—	Zin = Zout = 50
Output VSWR	VSWR (out)	—	1.5	—	—
Stability	—	No parasitic oscillation			—	Pin = 2 mW, V		DD = 12.5 V,

Pout = 6 W (at APC controlled), Zin = 50 Ω,

Output VSWR = 20:1 All phases, t = 20 sec

Test System Diagram

S.G		VAPC	VDD
	Power			Spectrum
	Meter			Analyzer
L.P.F	3dB
	ATT
		Test
				Power Meter
		Fixture
	Directional			Directional
	Coupler			Coupler

3

PF0030 Series

Test Fixture Pattern

Unit: mm

	26.5	2.88		2.88	28
	3.5	4.5 3	16	6	4
					4
				1.5
			VAPC	VDD		80
2.88	4				3.5	2.88
					4	16.5
15	4
				100
Grass Epoxy Double sided PCB
(t = 1.6 mm, εr = 4.8)

Mechanical Characteristics

Item	Conditions	Spec
Torque for screw up the heatsink flange	M3 Screw Bolts	4 to 6 kg•cm
Warp size of the heatsink flange: S		S = 0
		+0.3/–0 mm
		S

4

PF0030 Series

Note for Use

•Unevenness and distortion at the surface of the heatsink attached module should be less than 0.05 mm.

•It should not be existed any dust between module and heatsink.

•MODULE should be separated from PCB less than 1.5 mm.

•Soldering temperature and soldering time should be less than 230°C, 10 sec. (Soldering position spaced from the root point of the lead frame: 2 mm)

•Recommendation of thermal joint compounds is TYPE G746. (Manufacturer: Shin-Etsu Chemical, Co., Ltd.)

•To protect devices from electro-static damage, soldering iron, measuring-equipment and human body etc. should be grounded.

•Torque for screw up the heatsink flange should be 4 to 6 kg · cm with M3 screw bolts.

•Don’t solder the flange directly.

•It should make the lead frame as straight as possible.

•The module should be screwed up before lead soldering.

•It should not be given mechanical and thermal stress to lead and flange of the module.

•When the external parts (Isolator, Duplexer, etc.) of the module are changed, the electrical characteristics should be evaluated enough.

•Don’t washing the module except lead pins.

•To get good stability, ground impedance between the module GND flange and PCB GND pattern should be designed as low as possible.

5

PF0030 Series

Characteristics Curve

PF0030

		20
		16
	(W)
	Pout	12
	Power	8
	Output
		4
		0

0

		20
		16
	(W)
	Pout	12
	Power	8
	Output
		4
		0

0

Pout, ηT vs. VDD (1)

	ηT																						50
																							40
																							30	(%)
																								T
																								η
																							20	Efficiency
							Pout
																							10
																				f = 824 MHz
																				Pin = 2 mW
																				VAPC = 4 V
																							0
4	8												12							16	20
	Supply Voltage VDD (V)
	Pout, ηT vs. VDD (2)
																							50
	ηT																						40
																								(%)
																							30
																								T
																								η
																							20	Efficiency
							Pout
																							10
																				f = 849 MHz
																				Pin = 2 mW
																				VAPC = 4 V
																							0
4	8												12							16	20
	Supply Voltage												VDD (V)

6