HIT PF00105A Datasheet

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PF00105A

MOS FET Power Amplifier Module

for AMPS Handy Phone

ADE-208-447C (Z) 4th Edition February 1998

Features

Low voltage operation : 4.6 V

2 stage amplifier : +8 dBm input

Lead less small package : 0.2 cc

High efficiency : 48% Typ at 1 W

Low power control current : 500 A Typ

Pin Arrangement

RF-K

 

G

G

3

1: Pin

 

4

 

 

2: Vapc

 

 

 

 

3: Vdd

 

 

 

 

G 2

 

 

 

 

4: Pout

 

 

 

1

G

G: GND

Absolute Maximum Ratings (Tc = 25°C)

Item

Symbol

Rating

Unit

Supply voltage

VDD

10

V

Supply current

IDD

1

A

VAPC voltage

VAPC

4.5

V

Input power

Pin

20

mW

 

 

 

 

Operating case temperature

Tc (op)

–30 to +100

°C

Storage temperature

Tstg

–30 to +100

°C

Output power

 

 

 

 

 

 

 

 

 

Pout

2

W

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PF00105A

Electrical Characteristics (Tc = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

Test Condition

Frequency range

f

824

849

MHz

 

 

 

 

 

 

 

 

 

Drain cutoff current

IDS

20

µA

 

VDD = 7 V, VAPC = 0 V

Total efficiency

ηT

45

48

%

 

Pin = +8 dBm, V DD = 4.6 V,

 

 

 

 

 

 

 

 

2nd harmonic distortion

2nd H.D.

–40

–30

dBc

 

Pout = 1 W (at APC controlled)

 

 

 

 

 

 

 

 

3rd harmonic distortion

3rd H.D.

–40

–30

dBc

 

RL = Rg = 50Ω, Tc = 25°C

 

 

 

 

 

 

 

 

Input VSWR

VSWR (in)

1.5

3.0

 

 

 

 

 

 

 

 

 

 

Output power

Pout

1.0

1.1

W

 

Pin = +8 dBm, V DD = 4.6 V,

 

 

 

 

 

 

 

VAPC = 3 V, RL = Rg = 50Ω,

 

 

 

 

 

 

 

Tc = 25°C

 

 

 

 

 

 

 

Isolation

–20

+6

dBm

Pin = +8 dBm, V DD = 4.6 V,

 

 

 

 

 

 

 

VAPC = 0.1 V, RL = Rg = 50Ω,

 

 

 

 

 

 

 

Tc = 25°C

Stability

No parasitic

 

 

oscillation

Pin = +8 dBm, V DD = 4.3 to 6 V, Pout ≤ 1.2 W (at APC controlled),

Rg = 50 Ω, Tc = 25°C,

Output VSWR = 3 : 1 All phases

Load VSWR tolerance —

No parasitic

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

oscillation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Pin = +8 dBm, V DD = 4.3 to 6 V, Pout ≤ 1.2 W (at APC controlled),

Rg = 50 Ω, Tc = 25°C,

Output VSWR = 10 : 1 All phases

2

PF00105A

Characteristic Curves

ηT vs. Tc

 

60

 

 

Pin=+7dBm

824MHz

 

Vdd=4.6V

849MHz

 

Pout=1W

 

 

55

 

(%)

50

 

T

 

 

 

η

 

 

 

45

 

40

 

 

 

 

 

 

 

 

 

 

50

0

50

100

 

 

Tc

(°C)

 

 

Pout vs. Tc

 

1.6

Pin=+7dBm

 

824MHz

 

 

 

 

 

 

1.5

Vdd=4.6V

 

849MHz

 

 

Vapc=2.9V

 

 

 

 

1.4

 

 

 

 

(W)

1.3

 

 

 

 

 

 

 

 

 

Pout(1)

1.2

 

 

 

 

1.1

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

0.9

 

 

 

 

 

0.8

 

 

 

 

 

50

0

50

100

 

 

 

Tc

(°C)

 

3

HIT PF00105A Datasheet

PF00105A

Pout vs. Pin (1)

 

31.8

Vdd=4.6V

824MHz

 

 

 

 

 

 

Vapc=2.9V

836.5MHz

 

 

 

Tc=30°C

849MHz

 

 

31.6

 

 

 

(dBm)

31.4

 

 

 

Pout(1)

 

 

 

 

 

 

 

 

31.2

 

 

 

 

31

 

 

 

 

4

6

8

10

 

 

 

Pin (dBm)

 

Pout vs. Pin (2)

 

31.4

Vdd=4.6V

824MHz

 

 

 

 

 

 

Vapc=2.9V

836.5MHz

 

 

 

Tc=25°C

849MHz

 

 

31.2

 

 

 

(dBm)

31

 

 

 

Pout(1)

 

 

 

 

 

 

 

 

30.8

 

 

 

 

30.6

 

 

 

 

4

6

8

10

 

 

 

Pin (dBm)

 

4

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