HIT BB503C Datasheet

BB503C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

ADE-208-812B(Z) 3rd. Edition Jul. 1999

Features

•Build in Biasing Circuit; To reduce using parts cost & PC board space.

•Low noise; NF = 1.8 dB typ. at f = 900 MHz

•High gain; PG = 22 dB typ. at f = 900 MHz

•Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

•Provide mini mold packages; CMPAK-4(SOT-343mod)

Outline

CMPAK-4

		2
		3
			1
		4	1.	Source
			2.	Gate1
			3.	Gate2
			4.	Drain
Notes:	1.	Marking is “CS–”.
	2.	BB503C is individual type number of HITACHI BBFET.

BB503C

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDS	6	V
Gate1 to source voltage	VG1S	+6	V
		–0
Gate2 to source voltage	VG2S	+6	V
		–0
Drain current	ID	20	mA
Channel power dissipation	Pch	100	mW
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

V(BR)DSS

6

—

—

V

I

D = 200µA

voltage

VG1S = VG2S = 0

Gate1 to source breakdown

V(BR)G1SS

+6

—

—

V

I

G1 = +10µA

voltage

VG2S = VDS = 0

Gate2 to source breakdown

V(BR)G2SS

+6

—

—

V

I

G2 = +10µA

voltage

VG1S = VDS = 0

Gate1 to source cutoff current

IG1SS

—

—

+100

nA

V

G1S = +5V

VG2S = VDS = 0

Gate2 to source cutoff current

IG2SS

—

—

+100

nA

V

G2S = +5V

VG1S = VDS = 0

Gate1 to source cutoff voltage VG1S(off)

0.5

0.7

1.0

V

VDS = 5V, VG2S = 4V

ID = 100µA

Gate2 to source cutoff voltage VG2S(off)

0.5

0.7

1.0

V

VDS = 5V, VG1S = 5V

ID = 100µA

Drain current

ID(op)

7

10

13

mA

VDS = 5V, VG1 = 5V

VG2S = 4V, RG = 47kΩ

Forward transfer admittance

|yfs|

19

24

29

mS

VDS = 5V, VG1 = 5V

VG2S =4V

RG = 47kΩ, f = 1kHz

Input capacitance

ciss

1.4

1.7

2.0

pF

VDS = 5V, VG1 = 5V

Output capacitance

coss

0.7

1.1

1.5

pF

VG2S =4V, RG = 47kΩ

Reverse transfer capacitance

crss

—

0.025

0.05

pF

f = 1MHz

Power gain

PG

17

22

—

dB

V DS = 5V, VG1 = 5V

VG2S =4V, RG = 47kΩ

Noise figure

NF

—

1.8

2.4

dB

f = 900MHz

2

BB503C

Main Characteristics

Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)

VG2

VG1

R G

Gate 2

Gate 1

Drain				Source

A

I D

Application Circuit
VAGC = 4 to 0.3 V	V DS = 5	V
BBFET	RFC	Output
Input
R G
V GG = 5 V

3

BB503C

900MHz Power Gain, Noise Test Circuit

VG1 VG2			VD
C4	C5		C6
R1	R2	R3		RFC
	C3
	G2	D		Output (50Ω)
Input (50Ω)	G1		L3	L4

S

L1 L2

C1

C2

															C1, C2 :						Variable Capacitor (10pF MAX)
																		C3 :			Disk Capacitor (1000pF)
														C4 to C6 :							Air Capacitor (1000pF)
																		R1 :			47 kΩ
																		R2 :			47 kΩ
																		R3 :			4.7 kΩ
L1:																					L2:
								10																							26
														10
8
																					3																3
										21
L3:																					L4:											18
											29
																					10													10
7																	7

(φ1mm Copper wire) Unit: mm

RFC:φ1mm Copper wire with enamel 4turns inside dia 6mm

4