BB403M
Build in Biasing Circuit MOS FET IC
VHF/UHF RF Amplifier
ADE-208-699A (Z) 2nd. Edition Nov. 1998
Features
•Build in Biasing Circuit; To reduce using parts cost & PC board space.
•High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz)
•Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions.
•Provide mini mold packages; MPAK-4R (SOT-143 var.)
Outline
MPAK-4R
3
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1. |
Source |
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Drain |
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3. |
Gate2 |
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Gate1 |
Notes: 1. Marking is “CX–”.
2. BB403M is individual type number of HITACHI BBFET.
BB403M
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
7 |
V |
Gate1 to source voltage |
VG1S |
– 0/ +7 |
V |
Gate2 to source voltage |
VG2S |
– 0/ +7 |
V |
Drain current |
ID |
25 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Electrical Characteristics (Ta = 25°C) |
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Item |
Symbol |
Min |
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Typ |
Max |
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Test Conditions |
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Drain to source breakdown voltage |
V(BR)DSS |
7 |
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— |
— |
V |
I |
D = 200µA |
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VG1S = VG2S = 0 |
Gate1 to source breakdown |
V(BR)G1SS |
+7 |
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— |
— |
V |
I |
G1 = +10µA |
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voltage |
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VG2S = VDS = 0 |
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Gate2 to source breakdown |
V(BR)G2SS |
+7 |
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— |
— |
V |
I |
G2 = +10µA |
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voltage |
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VG1S = VDS = 0 |
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Gate1 to source cutoff current |
IG1SS |
— |
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— |
+100 |
nA |
V |
G1S = +5V |
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VG2S = VDS = 0 |
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Gate2 to source cutoff current |
IG2SS |
— |
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— |
+100 |
nA |
V |
G2S = +5V |
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VG1S = VDS = 0 |
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Gate1 to source cutoff voltage |
VG1S(off) |
0.3 |
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0.6 |
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0.9 |
V |
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VDS = 5V, VG2S = 4V |
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ID = 100µA |
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Gate2 to source cutoff voltage |
VG2S(off) |
0.5 |
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0.8 |
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1.1 |
V |
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VDS = 5V, VG1S = 5V |
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ID = 100µA |
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Drain current |
ID(op) |
9 |
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14 |
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20 |
mA |
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VDS = 5V, VG1 = 5V |
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VG2S = 4V, RG = 470kΩ |
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Forward transfer admittance |
|yfs| |
35 |
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42 |
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50 |
mS |
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VDS = 5V, VG1 = 5V |
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VG2S =4V |
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RG = 470kΩ, f = 1kHz |
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Input capacitance |
ciss |
2.6 |
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3.3 |
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4.0 |
pF |
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VDS = 5V, VG1 = 5V |
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Output capacitance |
coss |
1.7 |
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2.1 |
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2.5 |
pF |
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VG2S =4V, RG = 470kΩ |
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Reverse transfer capacitance |
crss |
— |
0.025 |
0.05 |
pF |
f = 1MHz |
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Power gain |
PG1 |
28 |
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32 |
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— |
dB |
V DS = 5V, VG1 = 5V |
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VG2S =4V, RG = 470kΩ |
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Noise figure |
NF1 |
— |
1.0 |
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1.6 |
dB |
f = 200MHz |
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Power gain |
PG2 |
12 |
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16.5 |
— |
dB |
V DS = 5V, VG1 = 5V |
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VG2S =4V, RG = 470kΩ |
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Noise figure |
NF2 |
— |
2.85 |
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3.7 |
dB |
f = 900MHz |
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2
BB403M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2 |
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VG1 |
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R G |
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Gate 2 |
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Gate 1 |
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Drain |
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Source |
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A
I D
Power Gain, Noise Figure Test Circuit
V T |
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VG2 |
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V T |
1000p |
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1000p |
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1000p |
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1000p |
47k |
BBFET |
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47k |
47k |
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L2 |
1000p |
Output(50Ω) |
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Input(50Ω) |
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L1 |
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10p max |
1000p |
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1000p |
RFC |
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1SV70 |
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36p |
1SV70 |
R G |
470k |
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1000p |
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V D= V G1 |
Unit |
Resistance |
(Ω) |
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Capacitance (F) |
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L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
3
BB403M
900MHz Power Gain, Noise Test Circuit
VG1 VG2 |
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VD |
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C4 |
C5 |
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C6 |
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R1 |
R2 |
R3 |
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RFC |
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C3 |
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G2 |
D |
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Output |
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G1 |
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L3 |
L4 |
Input |
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S |
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L1 |
L2 |
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C1 |
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C2 |
L1:
10
L3:
7
C1, C2 : Variable Capacitor (10pF MAX)
C3 : Disk Capacitor (1000pF)
C4 to C6 : Air Capacitor (1000pF)
R1 : 470 kΩ
R2 : 47 kΩ
R3 : 4.7 kΩ
L2:
10 |
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8 |
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26 |
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3 |
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25 |
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29 |
L4: |
18 |
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7 |
10 |
10 |
(φ1mm Copper wire) Unit : mm
RFC : φ1mm Copper wire with enamel 4turns inside dia 6mm
4
BB403M
Maximum Channel Power
Dissipation Curve
(mW) |
200 |
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25 |
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(mA) |
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Pch |
150 |
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20 |
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Power Dissipation |
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D |
15 |
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Drain Current I |
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100 |
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50 |
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10 |
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5 |
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Channel |
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0 |
50 |
100 |
150 |
200 |
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0 |
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Ambient Temperature Ta (°C)
Typical Output Characteristics
VG2S |
= 4 V |
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k |
Ω |
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k |
Ω |
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Ω |
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V G1= VDS |
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180 |
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220 |
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270 |
k |
Ω |
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k |
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R |
G |
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330 |
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Ω |
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k |
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390 |
Ω |
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k |
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Ω |
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470 k |
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560 |
Ω |
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k |
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680 |
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Ω |
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.5M |
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1 |
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Ω |
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820 kΩ |
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2.2 |
M |
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1 MΩ |
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1 |
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4 |
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Drain to Source Voltage |
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VDS (V) |
Drain Current I D (mA)
25
20
15
10
5
0
Drain Current vs. |
Drain Current vs. |
Drain to Source Voltage |
Gate1 to Source Voltage |
V |
= 4 V |
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25 |
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2.5 V |
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G2S |
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1.4 V |
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V DS = 5 V |
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4 V |
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1.5 V |
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2 V |
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20 |
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(mA) |
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3.5 V |
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1.3 V |
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D |
15 |
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3 V |
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1.2 V |
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1.5 V |
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Current |
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1.1 V |
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Drain |
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1.0 V |
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V |
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= 0.9 V |
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G1S |
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VG2S = 1 V |
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1 |
2 |
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5 |
0 |
4.0 |
8.0 |
1.2 |
1.6 |
2.0 |
Drain to Source Voltage |
V DS |
(V) |
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Gate1 to Source Voltage |
VG1S (V) |
5