BB302M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-572 A (Z) 2nd. Edition September 1997
Features
•Build in Biasing Circuit; To reduce using parts cost & PC board space.
•Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
•Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
•Provide mini mold packages; MPAK-4(SOT-143mod)
Outline
MPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
•Note 1 Marking is “BW–”.
•Note 2 BB302M is individual type number of HITACHI BBFET.
BB302M
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
12 |
V |
Gate1 to source voltage |
VG1S |
+10 |
V |
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– 0 |
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Gate2 to source voltage |
VG2S |
±10 |
V |
Drain current |
ID |
25 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Electrical Characteristics (Ta = 25°C) |
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Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
12 |
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— |
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V |
I |
D = 200µA |
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VG1S = VG2S = 0 |
Gate1 to source breakdown |
V(BR)G1SS |
+10 |
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— |
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V |
I |
G1 = +10µA |
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VG2S = VDS = 0 |
Gate2 to source breakdown |
V(BR)G2SS |
±10 |
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— |
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V |
I |
G2 = ±10µA |
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voltage |
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VG1S = VDS = 0 |
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Gate1 to source cutoff current |
IG1SS |
— |
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— |
+100 |
nA |
V |
G1S = +9V |
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VG2S = VDS = 0 |
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Gate2 to source cutoff current |
IG2SS |
— |
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— |
±100 |
nA |
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VG2S = ±9V |
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VG1S = VDS = 0 |
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Gate1 to source cutoff voltage VG1S(off) |
0.4 |
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— |
1.0 |
V |
V DS = 9V, VG2S = 6V |
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ID = 100µA |
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Gate2 to source cutoff voltage VG2S(off) |
0.4 |
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— |
1.0 |
V |
V DS = 9V, VG1S = 9V |
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ID = 100µA |
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Drain current |
ID(op) |
9 |
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13 |
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18 |
mA |
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VDS = 9V, VG1 = 9V |
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VG2S = 6V, RG = 120kΩ |
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Forward transfer admittance |
|yfs| |
15 |
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20 |
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— |
mS |
V DS = 9V, VG1 = 9V |
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VG2S =6V |
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RG = 120kΩ, f = 1kHz |
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Input capacitance |
ciss |
2.2 |
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3.0 |
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4.0 |
pF |
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VDS = 9V, VG1 = 9V |
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Output capacitance |
coss |
0.8 |
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1.1 |
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1.5 |
pF |
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VG2S =6V, RG = 120kΩ |
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Reverse transfer capacitance |
crss |
— |
0.017 |
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0.04 |
pF |
f = 1MHz |
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Power gain |
PG |
22 |
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26 |
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— |
dB |
V DS = 9V, VG1 = 9V |
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VG2S =6V |
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Noise figure |
NF |
— |
1.7 |
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2.2 |
dB |
R G = 120kΩ |
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f = 200MHz |
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2
BB302M
Main Characteristics
Test Circuit for Operating Items (I D(op) , |yfs|, Ciss, Coss, Crss, NF, PG)
VG2 |
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VG1 |
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R G |
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Gate 2 |
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Gate 1 |
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Drain |
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Source |
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A
I D
Application Circuit |
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VAGC = 6 to 0.3 V |
V DS = 9 |
V |
BBFET |
RFC |
Output |
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Input |
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R G |
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V GG = 9 V |
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3
BB302M
Maximum Channel Power |
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Dissipation Curve |
Typical Output Characteristics |
(mW) |
200 |
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25 |
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VG2S = 6 V |
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V G1 |
= VDS |
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Ω |
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Pch |
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(mA) |
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Ω |
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150 |
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20 |
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56 |
k |
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Ω |
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68 |
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k |
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Channel Power Dissipation |
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D |
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82 |
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Ω |
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Drain Current I |
15 |
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k |
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Ω |
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100 |
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k |
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100 |
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120 |
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Ω |
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k |
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10 |
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150 |
Ω |
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k |
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180 |
Ω |
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k |
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50 |
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5 |
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220 |
Ω |
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=270 |
k |
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RG |
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0 |
50 |
100 |
150 |
200 |
0 |
2 |
4 |
6 |
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8 |
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10 |
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Ambient Temperature |
Ta |
(°C) |
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Drain to Source Voltage |
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VDS (V) |
Drain Current I D (mA)
25
20
15
10
5
0
Drain Current vs. |
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Gate2 to Source Voltage |
Drain Current vs. Gate1 Voltage |
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Ω |
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68 k Ω |
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20 |
V DS = 9 V |
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k |
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56 |
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(mA) |
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R G = 100 kΩ |
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6 V |
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82 k Ω |
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16 |
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5 V |
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k Ω |
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4 V |
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100 |
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D |
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I |
12 |
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120 k Ω |
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3 V |
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Current |
8 |
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150 k Ω |
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2 V |
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180 k Ω |
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Drain |
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200 k Ω |
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R G = 220 k Ω |
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4 |
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VG2S = 1 V |
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V DS = VG1 = 9 V |
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1.2 |
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2.4 |
3.8 |
4.8 |
6.0 |
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0 |
2 |
4 |
6 |
8 |
10 |
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Gate2 to Source Voltage |
VG2S |
(V) |
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Gate1 Voltage |
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V G1 (V) |
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4