BB301M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
ADE-208-506 1st. Edition
Features
•Build in Biasing Circuit; To reduce using parts cost & PC board space.
•Low noise characteristics; (NF = 1.3 dB typ. at f = 200 MHz)
•Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 200 V at C = 200 pF, Rs = 0 conditions.
Outline
MPAK-4
2
3
1
1. Source
42. Gate1
3.Gate2
4.Drain
BB301M
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
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Ratings |
Unit |
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Drain to source voltage |
VDS |
6 |
V |
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Gate 1 to source voltage |
VG1S |
+6 |
V |
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–0 |
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Gate 2 to source voltage |
VG2S |
±6 |
V |
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Drain current |
ID |
25 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
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–55 to +150 |
°C |
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2
BB301M
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSS |
6 |
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— |
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— |
V |
I |
D = 200 µA |
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voltage |
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VG1S = VG2S = 0 |
Gate 1 to source breakdown |
V(BR)G1SS |
+6 |
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— |
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— |
V |
I |
G1 = +10 µA |
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voltage |
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VG2S = VDS = 0 |
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Gate 2 to source breakdown |
V(BR)G2SS |
±6 |
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— |
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— |
V |
I |
G2 = ±10 µA |
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voltage |
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VG1S = VDS = 0 |
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Gate 1 to source cutoff current |
IG1SS |
— |
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+100 |
nA |
V |
G1S = +5 V |
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VG2S = VDS = 0 |
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Gate 2 to source cutoff current |
IG2SS |
— |
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— |
±100 |
nA |
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VG2S = ±5 V |
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VG1S = VDS = 0 |
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Gate 1 to source cutoff voltage |
VG1S(off) |
0.4 |
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— |
1.0 |
V |
V DS = 5 V, VG2S = 4 V |
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ID = 100 µA |
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Gate 2 to source cutoff voltage |
VG2S(off) |
0.4 |
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— |
1.0 |
V |
V DS = 5 V, VG1S = 5 V |
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ID = 100 µA |
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Drain current |
ID(op) |
10 |
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15 |
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20 |
mA |
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VDS = 5 V, VG1 = 5 V |
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VG2S = 4 V, RG = 100 kΩ |
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Forward transfer admittance |
|yfs| |
15 |
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20 |
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— |
mS |
V DS = 5 V, VG1 = 5 V |
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VG2S = 4 V |
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RG = 100 kΩ, f = 1 kHz |
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Input capacitance |
Ciss |
2.2 |
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3.0 |
4.0 |
pF |
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VDS = 5 V, VG1 = 5 V |
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VG2S = 4 V, RG = 100 kΩ |
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Output capacitance |
Coss |
0.9 |
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1.2 |
1.6 |
pF |
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Reverse transfer capacitance |
Crss |
— |
0.018 |
0.04 |
pF |
f = 1 MHz |
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Power gain |
PG |
22 |
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26 |
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— |
dB |
V DS = 5 V, VG1 = 5 V |
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VG2S = 4 V |
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Noise figure |
NF |
— |
1.3 |
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1.9 |
dB |
R G = 100 kΩ, f = 200 MHz |
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Note: Marking is “AW–”. |
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3