HIT 4AK26 Datasheet

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HIT 4AK26 Datasheet

4AK26

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

RDS(on) 0.06 , VGS = 10 V, ID = 5 A RDS(on) 0.075 , VGS = 4 V, ID = 5 A

Capable of 4 V gate drive

Low drive current

High speed switching

High density mounting

Suitable for motor driver and solenoid driver and lamp driver

Outline

SP-12

 

2

 

1

D

5

 

G

 

G

 

S 3

 

4

 

9

 

D

8

D

12

 

 

 

G

 

G

S 6

 

S 7

 

11

1 2 3 4

5 6

7 8

 

D

 

 

 

 

910

 

 

 

 

 

 

 

 

1112

1, 5, 8, 12. Gate

S 10 2, 4, 9, 11. Drain

3, 6, 7, 10. Source

4AK26

Absolute Maximum Ratings (Ta = 25°C)

Item

 

 

 

 

 

 

 

Symbol

Ratings

Unit

Drain to source voltage

 

 

VDSS

60

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

10

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

32

A

Body to drain diode reverse drain current

 

 

IDR

10

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

28

W

Channel dissipation

 

 

Pch*2

4

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 Devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

4AK26

 

Electrical Characteristics (Ta = 25°C)

 

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Unit

 

Test conditions

 

 

 

 

 

 

 

 

 

 

Drain to source breakdown

V(BR)DSS

60

V

I

D = 10 mA, VGS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±10

µA

 

VGS = ±16 V, VDS = 0

 

Zero gate voltage drain current

IDSS

250

µA

 

VDS = 50 V, VGS = 0

 

Gate to source cutoff voltage

VGS(off)

1.0

2.0

V

 

I D = 1 mA, VDS = 10 V

Static drain to source on state RDS(on) resistance

0.045

0.06

Ω

ID = 5 A

 

 

 

 

VGS = 10 V*1

 

 

 

 

 

0.056

0.075

Ω

ID = 5 A

 

 

 

 

VGS = 4 V*1

Forward transfer admittance

|yfs|

10

12

S

I D = 5 A

 

 

 

 

 

 

 

 

 

VDS = 10 V*1

 

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

1400

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

720

pF

V

GS = 0

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

220

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

15

ns

I

 

D = 10 A

Rise time

tr

95

ns

V

GS = 10 V

 

 

 

 

 

 

 

 

L = 3 Ω

Turn-off delay time

td(off)

300

ns

R

Fall time

tf

170

ns

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode forward

VDF

1.05

V

I

F = 10 A, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode reverse

trr

110

µs

 

 

 

IF = 10 A, VGS = 0,

recovery time

 

 

 

 

 

 

 

 

dIF/dt = 50 A/µs

Note: 1. Pulse Test

3

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