HIT 4AK25 Datasheet

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HIT 4AK25 Datasheet

4AK25

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

RDS(on) 0.45 , VGS = 10 V, ID = 1 A

Low drive current

High speed switching

High density mounting

Outline

SP-10

3

5

D

D

 

4

2 G

G

 

1 S

 

7

9

1 2 3 4

5 6 7

 

 

D

D

 

8 9

 

6

8

 

 

10

G

G

 

 

 

 

 

 

 

 

 

 

 

1, 10.

Source

 

 

 

S 10

2, 4, 6, 8.

Gate

 

 

 

 

3, 5, 7, 9.

Drain

4AK25

Absolute Maximum Ratings (Ta = 25°C)

Item

 

 

 

 

 

 

 

Symbol

Ratings

Unit

Drain to source voltage

 

 

VDSS

60

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

1.5

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

4.5

A

Body to drain diode reverse drain current

 

 

IDR

1.5

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

24

W

Channel dissipation

 

 

Pch*2

3.6

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 Devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

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