4AK25
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.45 , VGS = 10 V, ID = 1 A
•Low drive current
•High speed switching
•High density mounting
Outline
SP-10
3 |
5 |
D |
D |
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4 |
2 G |
G |
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1 S |
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7 |
9 |
1 2 3 4 |
5 6 7 |
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D |
D |
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8 9 |
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6 |
8 |
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10 |
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G |
G |
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1, 10. |
Source |
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S 10 |
2, 4, 6, 8. |
Gate |
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3, 5, 7, 9. |
Drain |
4AK25
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
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Drain to source voltage |
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VDSS |
60 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
1.5 |
A |
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Drain peak current |
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ID(pulse)*1 |
4.5 |
A |
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Body to drain diode reverse drain current |
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IDR |
1.5 |
A |
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Channel dissipation |
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Pch (Tc = 25°C)*2 |
24 |
W |
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Channel dissipation |
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Pch*2 |
3.6 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
4 Devices operation |
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