4AK23
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.25 , VGS = 10 V, ID = 2.5 A
•Low drive current
•High speed switching
•High density mounting
•Suitable for H-bridged motor driver
Outline
SP-12TA
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2 |
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1 |
D |
5 |
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G |
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G |
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S 3 |
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4 |
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9 |
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D |
8 |
D |
12 |
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G |
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G |
S 6 |
S 7 |
11 |
1 2 |
3 4 5 |
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D |
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6 7 8 9 |
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10 |
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1112 |
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1, 5, 8, 12. |
Gate |
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S 10 |
2, 4, 9, 11. |
Drain |
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3, 6, 7, 10. |
Source |
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4AK23
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
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Drain to source voltage |
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VDSS |
100 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
5 |
A |
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Drain peak current |
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ID(pulse)*1 |
20 |
A |
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Body to drain diode reverse drain current |
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IDR |
5 |
A |
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Channel dissipation |
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Pch (Tc = 25°C)*2 |
32 |
W |
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Channel dissipation |
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Pch*2 |
4 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
4 Devices operation |
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