HIT 4AK23 Datasheet

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HIT 4AK23 Datasheet

4AK23

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

RDS(on) 0.25 , VGS = 10 V, ID = 2.5 A

Low drive current

High speed switching

High density mounting

Suitable for H-bridged motor driver

Outline

SP-12TA

 

2

 

1

D

5

 

G

 

G

 

S 3

 

4

 

9

 

D

8

D

12

 

 

 

G

 

G

S 6

S 7

11

1 2

3 4 5

 

 

D

 

6 7 8 9

 

 

 

 

10

 

 

 

 

 

 

 

 

1112

 

1, 5, 8, 12.

Gate

S 10

2, 4, 9, 11.

Drain

3, 6, 7, 10.

Source

 

4AK23

Absolute Maximum Ratings (Ta = 25°C)

Item

 

 

 

 

 

 

 

Symbol

Ratings

Unit

Drain to source voltage

 

 

VDSS

100

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

5

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

20

A

Body to drain diode reverse drain current

 

 

IDR

5

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

32

W

Channel dissipation

 

 

Pch*2

4

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 Devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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