HIT 4AK21 Datasheet

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4AK21

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

 

RDS(on)

0.09

, VGS

= 10 V, ID = 4 A

RDS(on)

0.12

, VGS

= 4 V, ID = 4 A

Capable of 4 V gate drive

Low drive current

High speed switching

High density mounting

Suitable for motor driver, solenoid driver and lamp driver

Discrete packaged devices of same die: 2SK1302, 2SK1307

HIT 4AK21 Datasheet

4AK21

Outline

SP-10

3

5

D

D

 

4

2 G

G

 

1 S

 

7

9

1 2 3 4

5 6 7

 

 

D

D

 

8 9

 

6

8

 

 

10

G

G

 

 

 

 

 

 

 

 

 

 

 

1, 10.

Source

 

 

 

S 10

2, 4, 6, 8.

Gate

 

 

 

 

3, 5, 7, 9.

Drain

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

Item

 

 

 

 

 

 

 

Symbol

Rating

Unit

Drain to source voltage

 

 

VDSS

100

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

8

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

32

A

Body to drain diode reverse drain current

 

 

IDR

8

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

28

W

Channel dissipation

 

 

Pch*2

4

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

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