4AK18
Silicon N-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) ≤ 0.38 , VGS = 10 V, ID = 1 A RDS(on) ≤ 0.53 , VGS = 4 V, ID = 1 A
•Capable of 4 V gate drive
•Low drive current
•High speed switching
•High density mounting
•Suitable for motor driver, solenoid driver and lamp driver
4AK18
Outline
SP-10
3 |
5 |
D |
D |
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4 |
2 G |
G |
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1 S |
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7 |
9 |
1 2 3 4 |
5 6 7 |
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D |
D |
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8 9 |
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6 |
8 |
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10 |
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G |
G |
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1, 10. |
Source |
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S 10 |
2, 4, 6, 8. |
Gate |
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3, 5, 7, 9. |
Drain |
Absolute Maximum Ratings (Ta = 25°C) (1 Unit)
Item |
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Symbol |
Rating |
Unit |
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Drain to source voltage |
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VDSS |
60 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
2.5 |
A |
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Drain peak current |
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ID(pulse)*1 |
10 |
A |
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Body to drain diode reverse drain current |
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IDR |
2.5 |
A |
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Channel dissipation |
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Pch (Tc = 25°C)*2 |
28 |
W |
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Channel dissipation |
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Pch*2 |
4 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
4 devices operation |
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2
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4AK18 |
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Electrical Characteristics (Ta = 25°C) (1 Unit) |
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Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSS |
60 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltage drain current |
IDSS |
— |
— |
100 |
µA |
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VDS = 50 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.0 |
V |
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I D = 1 mA, VDS = 10 V |
Static drain to source on state RDS(on) resistance
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0.25 |
0.38 |
Ω |
ID = 1 A |
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VGS = 10 V*1 |
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— |
0.40 |
0.53 |
Ω |
ID = 1 A |
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VGS = 4 V*1 |
Forward transfer admittance |
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1.2 |
2.0 |
— |
S |
I D = 1 A |
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VDS = 10 V*1 |
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Input capacitance |
Ciss |
— |
240 |
— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
115 |
— |
pF |
V |
GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
35 |
— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
4 |
— |
ns |
I |
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D = 1 A |
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Rise time |
tr |
— |
15 |
— |
ns |
V |
GS = 10 V |
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L = 30 Ω |
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Turn-off delay time |
td(off) |
— |
80 |
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ns |
R |
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Fall time |
tf |
— |
40 |
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ns |
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Body to drain diode forward |
VDF |
— |
1.0 |
— |
V |
I |
F = 2 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
— |
70 |
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ns |
I |
F = 2 A, VGS = 0 |
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recovery time |
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dIF/dt = 50 A/µs |
Note: 1. Pulse Test
3