HIT 4AK18 Datasheet

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4AK18

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

RDS(on) 0.38 , VGS = 10 V, ID = 1 A RDS(on) 0.53 , VGS = 4 V, ID = 1 A

Capable of 4 V gate drive

Low drive current

High speed switching

High density mounting

Suitable for motor driver, solenoid driver and lamp driver

HIT 4AK18 Datasheet

4AK18

Outline

SP-10

3

5

D

D

 

4

2 G

G

 

1 S

 

7

9

1 2 3 4

5 6 7

 

 

D

D

 

8 9

 

6

8

 

 

10

G

G

 

 

 

 

 

 

 

 

 

 

 

1, 10.

Source

 

 

 

S 10

2, 4, 6, 8.

Gate

 

 

 

 

3, 5, 7, 9.

Drain

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

Item

 

 

 

 

 

 

 

Symbol

Rating

Unit

Drain to source voltage

 

 

VDSS

60

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

2.5

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

10

A

Body to drain diode reverse drain current

 

 

IDR

2.5

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

28

W

Channel dissipation

 

 

Pch*2

4

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

4AK18

 

Electrical Characteristics (Ta = 25°C) (1 Unit)

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Unit

 

Test conditions

 

 

 

 

 

 

 

 

 

 

Drain to source breakdown

V(BR)DSS

60

V

I

D = 10 mA, VGS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±10

µA

 

VGS = ±16 V, VDS = 0

 

Zero gate voltage drain current

IDSS

100

µA

 

VDS = 50 V, VGS = 0

 

Gate to source cutoff voltage

VGS(off)

1.0

2.0

V

 

I D = 1 mA, VDS = 10 V

Static drain to source on state RDS(on) resistance

0.25

0.38

Ω

ID = 1 A

 

 

 

 

VGS = 10 V*1

 

 

 

 

 

0.40

0.53

Ω

ID = 1 A

 

 

 

 

VGS = 4 V*1

Forward transfer admittance

|yfs|

1.2

2.0

S

I D = 1 A

 

 

 

 

 

 

 

 

 

VDS = 10 V*1

 

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

240

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

115

pF

V

GS = 0

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

35

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

4

ns

I

 

D = 1 A

Rise time

tr

15

ns

V

GS = 10 V

 

 

 

 

 

 

 

 

L = 30 Ω

Turn-off delay time

td(off)

80

ns

R

Fall time

tf

40

ns

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode forward

VDF

1.0

V

I

F = 2 A, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode reverse

trr

70

ns

I

F = 2 A, VGS = 0

recovery time

 

 

 

 

 

 

 

 

dIF/dt = 50 A/µs

Note: 1. Pulse Test

3

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