HIT 4AK16 Datasheet

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4AK16

Silicon N-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

RDS(on) 0.18 , VGS = 10 V, ID = 5 A RDS(on) 0.25 , VGS = 4 V, ID = 5 A

Capable of 4 V gate drive

Low drive current

High speed switching

High density mounting

Suitable for motor driver, solenoid driver and lamp driver

HIT 4AK16 Datasheet

4AK16

Outline

SP-10

3

5

D

D

 

4

2 G

G

 

1 S

 

7

9

1 2 3 4

5 6 7

 

 

D

D

 

8 9

 

6

8

 

 

10

G

G

 

 

 

 

 

 

 

 

 

 

 

1, 10.

Source

 

 

 

S 10

2, 4, 6, 8.

Gate

 

 

 

 

3, 5, 7, 9.

Drain

Absolute Maximum Ratings (Ta = 25°C) (1 Unit)

Item

 

 

 

 

 

 

 

Symbol

Rating

Unit

Drain to source voltage

 

 

VDSS

60

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

5

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

20

A

Body to drain diode reverse drain current

 

 

IDR

5

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

28

W

Channel dissipation

 

 

Pch*2

4

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

4AK16

 

Electrical Characteristics (Ta = 25°C) (1 Unit)

 

 

 

 

 

Item

Symbol

Min

Typ

Max

Unit

 

Test conditions

 

 

 

 

 

 

 

 

 

 

Drain to source breakdown

V(BR)DSS

60

V

I

D = 10 mA, VGS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

 

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±10

µA

 

VGS = ±16 V, VDS = 0

 

Zero gate voltage drain current

IDSS

250

µA

 

VDS = 50 V, VGS = 0

 

Gate to source cutoff voltage

VGS(off)

1.0

2.0

V

 

I D = 1 mA, VDS = 10 V

Static drain to source on state RDS(on) resistance

0.12

0.18

Ω

ID = 5 A

 

 

 

 

VGS = 10 V*1

 

 

 

 

 

0.17

0.25

Ω

ID = 5 A

 

 

 

 

VGS = 4 V*1

Forward transfer admittance

|yfs|

3.5

6.0

S

I D = 5 A

 

 

 

 

 

 

 

 

 

VDS = 10 V*1

 

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

400

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

220

pF

V

GS = 0

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

60

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

5

ns

I

 

D = 5 A

Rise time

tr

55

ns

V

GS = 10 V

 

 

 

 

 

 

 

 

L = 6 Ω

Turn-off delay time

td(off)

140

ns

R

Fall time

tf

90

ns

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode forward

VDF

1.0

V

I

F = 5 A, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode reverse

trr

100

ns

I

F = 5 A, VGS = 0

recovery time

 

 

 

 

 

 

 

 

dIF/dt = 50 A/µs

Note: 1. Pulse test

3

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