HIT 4AJ11 Datasheet

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4AJ11

Silicon P-Channel Power MOS FET Array

Application

High speed power switching

Features

Low on-resistance

RDS(on) 0.13 , VGS = –10 V, ID = –4 A

RDS(on) 0.17 , VGS = –4 V, I D = –4 A

Capable of 4 V gate drive

Low drive current

High speed switching

High density mounting

Suitable for motor driver and solenoid driver and lamp driver

HIT 4AJ11 Datasheet

4AJ11

Outline

SP-12

 

2

 

1

D

5

 

G

 

G

 

S 3

 

4

 

9

 

D

8

D

12

 

 

 

G

 

G

S 6

 

S 7

 

11

1 2

3 4

 

 

 

 

5 6

7 8

 

D

 

 

 

 

 

 

910

 

 

 

 

 

 

 

 

 

 

1112

1, 5, 8, 12. Gate

S 10 2, 4, 9, 11. Drain 3, 6, 7, 10. Source

Absolute Maximum Ratings (Ta = 25°C)

Item

 

 

 

 

 

 

 

Symbol

Ratings

Unit

Drain to source voltage

 

 

VDSS

–60

V

Gate to source voltage

 

 

VGSS

±20

V

Drain current

 

 

ID

–8

A

 

 

 

 

 

 

Drain peak current

 

 

ID(pulse)*1

–32

A

Body to drain diode reverse drain current

 

 

IDR

–8

A

Channel dissipation

 

 

Pch (Tc = 25°C)*2

28

W

Channel dissipation

 

 

Pch*2

4

W

 

 

 

 

 

 

Channel temperature

 

 

Tch

150

°C

Storage temperature

 

 

Tstg

–55 to +150

°C

Notes: 1.

PW 10 s, duty cycle 1%

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2.

4 Devices operation

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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