4AJ11
Silicon P-Channel Power MOS FET Array
Application
High speed power switching
Features
• Low on-resistance
RDS(on) 0.13 , VGS = –10 V, ID = –4 A
RDS(on) 0.17 , VGS = –4 V, I D = –4 A
•Capable of 4 V gate drive
•Low drive current
•High speed switching
•High density mounting
•Suitable for motor driver and solenoid driver and lamp driver
4AJ11
Outline
SP-12
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2 |
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1 |
D |
5 |
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G |
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G |
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S 3 |
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4 |
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9 |
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D |
8 |
D |
12 |
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G |
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G |
S 6 |
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S 7 |
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11 |
1 2 |
3 4 |
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5 6 |
7 8 |
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D |
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910 |
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1112 |
1, 5, 8, 12. Gate
S 10 2, 4, 9, 11. Drain 3, 6, 7, 10. Source
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
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Drain to source voltage |
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VDSS |
–60 |
V |
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Gate to source voltage |
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VGSS |
±20 |
V |
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Drain current |
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ID |
–8 |
A |
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Drain peak current |
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ID(pulse)*1 |
–32 |
A |
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Body to drain diode reverse drain current |
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IDR |
–8 |
A |
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Channel dissipation |
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Pch (Tc = 25°C)*2 |
28 |
W |
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Channel dissipation |
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Pch*2 |
4 |
W |
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Channel temperature |
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Tch |
150 |
°C |
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Storage temperature |
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Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 s, duty cycle ≤ 1% |
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2. |
4 Devices operation |
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