4AC14
Silicon NPN Triple Diffused
Application
Low frequency power amplifier
Outline
SP-10
1
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10 |
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1, 10 |
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Emitter |
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2, 4, 6, 8 |
Base |
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3, 5, 7, 9 |
Collector |
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3 |
2 |
4 |
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ID |
1 |
7 |
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6 |
8 |
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ID |
5 |
ID |
9 |
ID |
10 |
4AC14
Absolute Maximum Ratings (for each device, Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
150 |
V |
Collector to emitter voltage |
VCEO |
150 |
V |
Emitter to base voltage |
VEBO |
7 |
V |
Collector current |
IC |
5 |
A |
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Collector peak current |
IC(peak) |
10 |
A |
Diode current |
ID |
5 |
A |
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Collector power dissipation |
PC*1 |
4 |
W |
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PC*1 (TC = 25°C) |
28 |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. 4 devices operation. |
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Electrical Characteristics (for each device, Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
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Unit |
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Test conditions |
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Collector to emitter breakdown |
V(BR)CBO |
150 |
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— |
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— |
V |
I |
C = 0.1 mA, IE = 0 |
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voltage |
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Collector to emitter sustain |
VCEO(SUS) |
150 |
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— |
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— |
V |
I |
C = 0.2 A, L = 20 mHz, RBE = ∞ |
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voltage |
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Emitter to base breakdown |
V(BR)EBO |
7 |
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— |
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— |
V |
I |
E = 50 mA, IC = 0 |
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voltage |
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Collector cutoff current |
ICBO |
— |
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— |
10 |
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A |
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VCB = 120 V, IE = 0 |
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ICEO |
— |
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— |
10 |
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V |
CE = 120 V, RBE = ∞ |
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DC current transfer ratio |
h |
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1000 |
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— |
20000 |
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V |
CE |
= 3 V, I = 3 A*1 |
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FE |
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C |
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Collector to emitter saturation |
V |
CE(sat) |
— |
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— |
1.5 |
V |
I |
C |
= 3 A, I = 6 mA*1 |
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voltage |
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B |
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Base to emitter saturation |
V |
BE(sat) |
— |
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— |
2.0 |
V |
I |
C |
= 3 A, I = 6 mA*1 |
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voltage |
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B |
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C to E diode forward current |
VD |
— |
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— |
3.5 |
V |
I |
D = 5 A |
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Note: 1. Pulse test. |
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2
4AC14
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Maximum Collector Dissipation Curve |
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6 |
4 device operation |
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(W) |
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Pc |
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3 device operation |
PcdissipationpowerCollector(W) |
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dissipationpowerCollector |
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4 |
2 device operation |
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1 device operation |
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2 |
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0 |
50 |
100 |
150 |
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Ambient temperature |
Ta |
(°C) |
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Maximum Collector Dissipation Curve
30
4 device operation
3 device operation
20
2 device operation
10
1 device operation
Note: Collector power dissipation of each devices |
0 |
50 |
100 |
150 |
is identical. |
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Case temperature TC (°C) |
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Collector current IC (A)
Area of Safe Operation |
Typical Output Characteristics |
100 |
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5 |
4.5 |
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iC (peak) |
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4 |
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10 |
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(A) |
4 |
3.5 |
2 |
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3 |
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C |
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.5 |
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PW |
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1 |
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IC (max) |
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I |
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2.5 |
1 |
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= |
ms |
current |
3 |
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1.0 |
DC |
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10 |
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ms |
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(T |
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Operation |
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C |
= |
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Collector |
2 |
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25 |
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1 mA |
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° |
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0.1 |
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C) |
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1 |
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Ta = 25°C |
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IB = 0 TC = 25°C |
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1 shot pulse |
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0.01 |
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0.3 |
1.0 |
3.0 |
10 |
30 |
100 |
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300 |
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0 |
1 |
2 |
3 |
4 |
5 |
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Collector to emitter voltage |
VCE (V) |
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Collector to emitter voltage |
VCE (V) |
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3