3SK321
Silicon N-Channel Dual Gate MOS FET
ADE-208-711A (Z) 2nd. Edition Dec. 1998
Application
UHF RF amplifier
Features
•Low noise figure.
NF = 2.0 dB typ. at f = 900 MHz
•Capable of low voltage operation
•Provide mini mold packages; MPAK-4R(SOT-143 var.)
Outline
MPAK-4R
3
4
2
1 1. Source
2. Drain
3. Gate2
4. Gate1
3SK321
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
12 |
V |
Gate 1 to source voltage |
VG1S |
±8 |
V |
Gate 2 to source voltage |
VG2S |
±8 |
V |
Drain current |
ID |
25 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSX |
12 |
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— |
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— |
V |
I |
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D = 200 A , VG1S = –3 V, |
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voltage |
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VG2S = –3 V |
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Gate 1 to source breakdown |
V(BR)G1SS |
±8 |
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— |
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— |
V |
I |
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G1 = ±10 A, VG2S = VDS = 0 |
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voltage |
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Gate 2 to source breakdown |
V(BR) G2SS |
±8 |
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— |
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— |
V |
I |
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G2 = ±10 A, VG1S = VDS = 0 |
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voltage |
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Gate 1 cutoff current |
IG1SS |
— |
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— |
±100 |
nA |
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VG1S = ±6 V, VG2S = VDS = 0 |
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Gate 2 cutoff current |
IG2SS |
— |
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— |
±100 |
nA |
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VG2S = ±6 V, VG1S = VDS = 0 |
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Drain current |
IDS(on) |
0.5 |
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— |
10 |
mA |
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V DS = 6 V, VG1S = 0.5V, |
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VG2S = 3 V |
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Gate 1 to source cutoff voltage |
VG1S(off) |
–0.5 |
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— |
+0.5 |
V |
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V DS = 10 V, VG2S = 3V, |
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ID = 100 A |
Gate 2 to source cutoff voltage |
VG2S(off) |
0 |
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— |
+1.0 |
V |
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V DS = 10 V, VG1S = 3V, |
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ID = 100 A |
Forward transfer admittance |
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16 |
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20.8 |
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— |
mS |
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V DS = 6 V, VG2S = 3V, |
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ID = 10 mA, f = 1 kHz |
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Input capacitance |
Ciss |
1.2 |
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1.5 |
2.2 |
pF |
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VDS = 6 V, VG2S = 3V, |
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ID = 10 mA, f = 1 MHz |
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Output capacitance |
Coss |
0.6 |
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0.9 |
1.2 |
pF |
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Reverse transfer capacitance |
Crss |
— |
0.01 |
0.03 |
pF |
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Power gain |
PG |
16 |
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19.5 |
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— |
dB |
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V DS = 4 V, VG2S = 3V, |
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ID = 10 mA, f = 900 MHz |
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Noise figure |
NF |
— |
2.0 |
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3 |
dB |
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Note: Marking is “ZX–” |
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2
3SK321
Main Characteristics
900MHz Power Gain, Noise Test Circuit
VG1 VG2 |
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VD |
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C4 |
C5 |
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C6 |
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R1 |
R2 |
R3 |
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RFC |
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C3 |
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G2 |
D |
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Output |
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G1 |
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L3 |
L4 |
Input |
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S |
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L1 |
L2 |
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C1 |
C2 |
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C1, C2 |
Variable Capacitor 10pF MAX) |
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C3 |
Disk Capacitor 1000pF) |
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C4 C6 |
Air Capacitor 1000pF) |
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R1 |
47 kΩ |
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R2 |
47 kΩ |
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R3 |
4.7 kΩ |
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L1 |
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L2 |
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L3 |
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L4 |
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φ1mm Copper wire Unit mm
RFC φ1mm Copper wire with enamel 4turns inside dia 6mm
3