3SK319
Silicon N-Channel Dual Gate MOS FET
UHF RF Amplifier
ADE-208-602(Z) 1st. Edition February 1998
Features
•Low noise characteristics;
(NF= 1.4 dB typ. at f= 900 MHz)
•Excellent cross modulation characteristics
•Capable low voltage operation; +B= 5V
Outline
MPAK-4
2
3
1
4 1. Source
2. Gate1
3. Gate2
4. Drain
Note: Marking is “YB–”.
3SK319
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
6 |
V |
Gate1 to source voltage |
VG1S |
±6 |
V |
Gate2 to source voltage |
VG2S |
±6 |
V |
Drain current |
ID |
20 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
6 |
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— |
— |
V |
I |
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D = 200 A, VG1S = VG2S = 0 |
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Gate1 to source breakdown |
V(BR)G1SS |
±6 |
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— |
— |
V |
I |
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G1 = ±10 A, VG2S = VDS = 0 |
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Gate2 to source breakdown |
V(BR)G2SS |
±6 |
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— |
— |
V |
I |
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G2 = ±10 A, VG1S = VDS = 0 |
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voltage |
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Gate1 to source cutoff current |
IG1SS |
— |
— |
±100 |
nA |
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VG1S = ±5V, VG2S = VDS = 0 |
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Gate2 to source cutoff current |
IG2SS |
— |
— |
±100 |
nA |
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VG2S = ±5V, VG1S = VDS = 0 |
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Gate1 to source cutoff voltage |
VG1S(off) |
0.5 |
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0.7 |
1.0 |
V |
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VDS = 5V, VG2S = 3V, ID = 100 A |
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Gate2 to source cutoff voltage |
VG2S(off) |
0.5 |
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0.7 |
1.0 |
V |
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VDS = 5V, VG1S = 3V, ID = 100 A |
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Drain current |
IDS(op) |
0.5 |
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4 |
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10 |
mA |
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VDS = 3.5V, VG1S = 1.1V, VG2S = 3V |
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Forward transfer admittance |
|yfs| |
18 |
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24 |
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32 |
mS |
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VDS = 3.5V, VG2S = 3V |
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ID = 10mA , f=1kHz |
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Input capacitance |
Ciss |
1.3 |
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1.6 |
1.9 |
pF |
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VDS = 3.5V, VG2S = 3V |
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Output capacitance |
Coss |
0.9 |
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1.2 |
1.5 |
pF |
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ID = 10mA , f= 1MHz |
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Reverse transfer capacitance |
Crss |
— |
0.019 |
0.03 |
pF |
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Power gain |
PG |
18 |
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21 |
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— |
dB |
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V DS = 3.5V, VG2S = 3V |
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Noise figure |
NF |
— |
1.4 |
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2.2 |
dB |
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I D = 10mA , f=900MHz |
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3SK319 |
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Maximum Channel Power |
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(mW) |
200 |
Dissipation Curve |
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20 |
Typical Output Characteristics |
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VG1S = 1.7 V |
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VG2S = 3 V |
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Pch |
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(mA) |
16 |
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1.6 V |
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150 |
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1.5 V |
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Channel Power Dissipation |
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D |
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12 |
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Drain Current I |
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1.4 V |
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100 |
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1.3 V |
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1.2 V |
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50 |
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4 |
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1.1 V |
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1.0 V |
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0.9 V |
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0.8 V |
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0 |
50 |
100 |
150 |
200 |
0 |
2 |
4 |
6 |
8 |
10 |
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Ambient Temperature |
Ta |
(°C) |
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Drain to Source Voltage |
VDS (V) |
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Drain Current I D (mA)
Drain Current vs. |
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Drain Current vs. |
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Gate1 to Source Voltage |
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Gate2 to Source Voltage |
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20 |
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20 |
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V DS = 3.5 V |
2.5 V |
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V DS = 3.5 V |
1.8 V |
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16 |
2.0 V |
(mA) |
2.0 V |
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16 |
1.6 V |
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D |
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12 |
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I |
12 |
1.4 V |
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Current |
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8 |
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1.5 V |
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8 |
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1.2 V |
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Drain |
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4 |
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4 |
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VG1S |
= 1.0 V |
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0 |
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VG2S = 1.0 V |
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0 |
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1 |
2 |
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4 |
5 |
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1 |
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Gate1 to Source Voltage |
VG1S |
(V) |
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Gate2 to Source Voltage |
VG2S (V) |
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3