3SK300
Silicon N Channel Dual Gate MOS FET
UHF / VHF RF Amplifier
ADE-208-449 1st. Edition
Features
•Low noise figure
NF = 1.0 dB typ. at f = 200 MHz
•High gain
PG = 27.6 dB typ. at f = 200 MHz
Outline
MPAK-4
2
3
1
1. Source
42. Gate1
3.Gate2
4.Drain
3SK300
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
|
|
|
|
|
|
|
|
|
|
|
|
Ratings |
Unit |
||||
Drain to source voltage |
VDS |
14 |
V |
||||||||||||||||
Gate 1 to source voltage |
VG1S |
±8 |
V |
||||||||||||||||
Gate 2 to source voltage |
VG2S |
±8 |
V |
||||||||||||||||
Drain current |
ID |
25 |
mA |
||||||||||||||||
|
|
|
|
||||||||||||||||
Channel power dissipation |
Pch |
150 |
mW |
||||||||||||||||
|
|
|
|
||||||||||||||||
Channel temperature |
Tch |
150 |
°C |
||||||||||||||||
Storage temperature |
Tstg |
|
|
|
|
|
|
|
|
|
|
|
|
–55 to +150 |
°C |
||||
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
|
2
3SK300
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
Test conditions |
Drain to source breakdown |
V(BR)DSX |
14 |
— |
— |
V |
I |
|
D = 200 A, VG1S = –3 V, |
voltage |
|
|
|
|
|
|
|
VG2S = –3 V |
|
|
|
|
|
|
|
|
|
Gate 1 to source breakdown |
V(BR)G1SS |
±8 |
— |
— |
V |
I |
|
G1 = ±10 A, |
voltage |
|
|
|
|
|
|
|
VDS = VG2S = 0 |
|
|
|
|
|
|
|
|
|
Gate 2 to source breakdown |
V(BR)G2SS |
±8 |
— |
— |
V |
I |
|
G2 = ±10 A, |
voltage |
|
|
|
|
|
|
|
VDS = VG1S = 0 |
|
|
|
|
|
|
|
|
|
Gate 1 cutoff current |
IG1SS |
— |
— |
±100 |
nA |
|
|
VG1S = ±6 V, |
|
|
|
|
|
|
|
|
VDS = VG2S = 0 |
|
|
|
|
|
|
|
|
|
Gate 2 cutoff current |
IG2SS |
— |
— |
±100 |
nA |
|
|
VG2S = ±6 V, |
|
|
|
|
|
|
|
|
VDS = VG1S = 0 |
|
|
|
|
|
|
|
|
|
Drain current |
IDS(op) |
4 |
8 |
14 |
mA |
|
|
VDS = 6 V, VG1S = 0.75 V, |
|
|
|
|
|
|
|
|
VG2S = 3 V |
|
|
|
|
|
|
|
|
|
Gate 1 to source cutoff voltage |
VG1S(off) |
0 |
+0.2 |
+1.0 |
V |
|
|
VDS = 10 V, VG2S = 3 V, |
|
|
|
|
|
|
|
|
ID = 100 A |
Gate 2 to source cutoff voltage |
VG2S(off) |
0 |
+0.3 |
+1.0 |
V |
|
|
VDS = 10 V, VG1S = 3 V, |
|
|
|
|
|
|
|
|
ID = 100 A |
Forward transfer admittance |
|yfs| |
20 |
25 |
— |
ms |
|
V DS = 6 V, VG2S = 3 V, |
|
|
|
|
|
|
|
|
|
ID = 10 mA, f = 1 kHz |
|
|
|
|
|
|
|
|
|
Input capacitance |
Ciss |
2.4 |
3.1 |
3.5 |
pF |
|
|
VDS = 6 V, |
|
|
|
|
|
|
|
|
|
Output capacitance |
Coss |
0.8 |
1.1 |
1.4 |
pF |
|
|
VG2S = 3 V, ID = 10 mA |
|
|
|
|
|
|
|
|
|
Reverse transfer capacitance |
Crss |
— |
0.021 |
0.04 |
pF |
|
f = 1 MHz |
|
|
|
|
|
|
|
|
|
|
Power gain |
PG |
24 |
27.6 |
— |
dB |
|
V DS = 6 V, VG2S = 3 V, |
|
|
|
|
|
|
|
|
|
|
Noise figure |
NF |
— |
1.0 |
1.5 |
dB |
|
I D = 10 mA, f = 200 MHz |
|
|
|
|
|
|
|
|
|
|
Power gain |
PG |
12 |
15.6 |
— |
dB |
|
V DS = 6 V, VG2S = 3 V, |
|
|
|
|
|
|
|
|
|
|
Noise figure |
NF |
— |
3.0 |
4.0 |
dB |
|
I D = 10 mA, f = 900 MHz |
|
|
|
|
|
|
|
|
|
|
Noise figure |
NF |
— |
2.7 |
3.5 |
dB |
|
V DS = 6 V, VG2S = 3 V, |
|
|
|
|
|
|
|
|
|
ID = 10 mA, f = 60 MHz |
|
|
|
|
|
|
|
|
|
Note: Marking is “ZR–”
3