HIT 3SK300 Datasheet

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HIT 3SK300 Datasheet

3SK300

Silicon N Channel Dual Gate MOS FET

UHF / VHF RF Amplifier

ADE-208-449 1st. Edition

Features

Low noise figure

NF = 1.0 dB typ. at f = 200 MHz

High gain

PG = 27.6 dB typ. at f = 200 MHz

Outline

MPAK-4

2

3

1

1. Source

42. Gate1

3.Gate2

4.Drain

3SK300

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

 

 

 

 

 

 

 

 

 

 

 

 

Ratings

Unit

Drain to source voltage

VDS

14

V

Gate 1 to source voltage

VG1S

±8

V

Gate 2 to source voltage

VG2S

±8

V

Drain current

ID

25

mA

 

 

 

 

Channel power dissipation

Pch

150

mW

 

 

 

 

Channel temperature

Tch

150

°C

Storage temperature

Tstg

 

 

 

 

 

 

 

 

 

 

 

 

–55 to +150

°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

3SK300

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test conditions

Drain to source breakdown

V(BR)DSX

14

V

I

 

D = 200 A, VG1S = –3 V,

voltage

 

 

 

 

 

 

 

VG2S = –3 V

 

 

 

 

 

 

 

 

 

Gate 1 to source breakdown

V(BR)G1SS

±8

V

I

 

G1 = ±10 A,

voltage

 

 

 

 

 

 

 

VDS = VG2S = 0

 

 

 

 

 

 

 

 

 

Gate 2 to source breakdown

V(BR)G2SS

±8

V

I

 

G2 = ±10 A,

voltage

 

 

 

 

 

 

 

VDS = VG1S = 0

 

 

 

 

 

 

 

 

 

Gate 1 cutoff current

IG1SS

±100

nA

 

 

VG1S = ±6 V,

 

 

 

 

 

 

 

 

VDS = VG2S = 0

 

 

 

 

 

 

 

 

 

Gate 2 cutoff current

IG2SS

±100

nA

 

 

VG2S = ±6 V,

 

 

 

 

 

 

 

 

VDS = VG1S = 0

 

 

 

 

 

 

 

 

 

Drain current

IDS(op)

4

8

14

mA

 

 

VDS = 6 V, VG1S = 0.75 V,

 

 

 

 

 

 

 

 

VG2S = 3 V

 

 

 

 

 

 

 

 

 

Gate 1 to source cutoff voltage

VG1S(off)

0

+0.2

+1.0

V

 

 

VDS = 10 V, VG2S = 3 V,

 

 

 

 

 

 

 

 

ID = 100 A

Gate 2 to source cutoff voltage

VG2S(off)

0

+0.3

+1.0

V

 

 

VDS = 10 V, VG1S = 3 V,

 

 

 

 

 

 

 

 

ID = 100 A

Forward transfer admittance

|yfs|

20

25

ms

 

V DS = 6 V, VG2S = 3 V,

 

 

 

 

 

 

 

 

ID = 10 mA, f = 1 kHz

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

2.4

3.1

3.5

pF

 

 

VDS = 6 V,

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

0.8

1.1

1.4

pF

 

 

VG2S = 3 V, ID = 10 mA

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

0.021

0.04

pF

 

f = 1 MHz

 

 

 

 

 

 

 

 

Power gain

PG

24

27.6

dB

 

V DS = 6 V, VG2S = 3 V,

 

 

 

 

 

 

 

 

 

Noise figure

NF

1.0

1.5

dB

 

I D = 10 mA, f = 200 MHz

 

 

 

 

 

 

 

 

Power gain

PG

12

15.6

dB

 

V DS = 6 V, VG2S = 3 V,

 

 

 

 

 

 

 

 

 

Noise figure

NF

3.0

4.0

dB

 

I D = 10 mA, f = 900 MHz

 

 

 

 

 

 

 

 

Noise figure

NF

2.7

3.5

dB

 

V DS = 6 V, VG2S = 3 V,

 

 

 

 

 

 

 

 

ID = 10 mA, f = 60 MHz

 

 

 

 

 

 

 

 

 

Note: Marking is “ZR–”

3

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