3SK298
Silicon N-Channel Dual Gate MOS FET
ADE-208-390 1st. Edition
Application
UHF / VHF RF amplifier
Features
•Low noise figure.
NF = 1.0 dB typ. at f = 200 MHz
•Capable of low voltage operation
Outline
CMPAK–4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
3SK298
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDS |
12 |
V |
Gate 1 to source voltage |
VG1S |
±8 |
V |
Gate 2 to source voltage |
VG2S |
±8 |
V |
Drain current |
ID |
25 |
mA |
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Channel power dissipation |
Pch |
100 |
mW |
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Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
2
3SK298
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
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Drain to source breakdown |
V(BR)DSX |
12 |
— |
— |
V |
I |
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D = |
200 A , VG1S = –3 V, |
voltage |
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VG2S = –3 V |
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Gate 1 to source breakdown |
V(BR)G1SS |
±8 |
— |
— |
V |
I |
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G1 = ±10 A, VG2S = VDS = 0 |
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voltage |
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Gate 2 to source breakdown |
V(BR) G2SS |
±8 |
— |
— |
V |
I |
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G2 = ±10 A, VG1S = VDS = 0 |
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voltage |
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Gate 1 cutoff current |
IG1SS |
— |
— |
±100 |
nA |
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VG1S = ±6 V, VG2S = VDS = 0 |
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Gate 2 cutoff current |
IG2SS |
— |
— |
±100 |
nA |
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VG2S = ±6 V, VG1S = VDS = 0 |
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Drain current |
IDS(on) |
0.5 |
— |
10 |
mA |
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V DS = 6 V, VG1S = 0.75V, |
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VG2S = 3 V |
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Gate 1 to source cutoff voltage |
VG1S(off) |
0 |
— |
+1.0 |
V |
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V DS = 10 V, VG2S = 3V, |
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ID = |
100 A |
Gate 2 to source cutoff voltage |
VG2S(off) |
0 |
— |
+1.0 |
V |
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V DS = 10 V, VG1S = 3V, |
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ID = |
100 A |
Forward transfer admittance |
|yfs| |
16 |
20 |
— |
mS |
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V DS = 6 V, VG2S = 3V, |
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ID = |
10 mA, f = 1 kHz |
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Input capacitance |
Ciss |
2.4 |
2.9 |
3.4 |
pF |
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VDS = 6 V, VG2S = 3V, |
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ID = |
10 mA, f = 1 MHz |
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Output capacitance |
Coss |
0.8 |
1.0 |
1.4 |
pF |
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Reverse transfer capacitance |
Crss |
— |
0.023 |
0.04 |
pF |
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Power gain |
PG |
22 |
25 |
— |
dB |
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V DS = 6 V, VG2S = 3V, |
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ID = |
10 mA, f = 200 MHz |
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Noise figure |
NF |
— |
1.0 |
1.8 |
dB |
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Power gain |
PG |
12 |
15 |
— |
dB |
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V DS = 6 V, VG2S = 3V, |
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ID = |
10 mA, f = 900 MHz |
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Noise figure |
NF |
— |
3.2 |
4.5 |
dB |
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Noise figure |
NF |
— |
2.8 |
3.5 |
dB |
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V DS = 6 V, VG2S = 3V, |
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ID = |
10 mA, f = 60 MHz |
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Note: Marking is “ZP–”
3
3SK298
Channel Power Dissipation Pch (mW)
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Maximum Channel Power |
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200 |
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Dissipation Curve |
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20 |
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(mA) |
16 |
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D |
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I |
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50 |
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currentDrain |
4 |
100 |
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8 |
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0 |
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0 |
50 |
100 |
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150 |
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200 |
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Ambient Temperature |
Ta (°C) |
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Typical Output Characteristics
VG2S = 3 V |
1.4 V |
Pulse test |
1.2 V
1.0 V
0.8 V
0.6 V
VG1S = 0.4 V
2 |
4 |
6 |
8 |
10 |
Drain to source voltage |
VDS (V) |
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Drain Current vs. Gate1 to Source Voltage
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20 |
3.0 V |
2.0 V |
VDS = 6 V |
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(mA) |
16 |
2.5 V |
1.5 V |
Pulse test |
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D |
12 |
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I |
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Drain current |
8 |
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1.0 V |
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4 |
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VG2S = 0.5 V |
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0 |
1 |
2 |
3 |
4 |
5 |
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Gate1 to source voltage |
VG1S |
(V) |
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Drain Current vs. Gate2 to Source Voltage 20
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3.0 V |
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VDS = 6 V |
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16 |
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2.0 V |
Pulse test |
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(mA) |
2.5 V |
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1.5 V |
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D 12 |
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1.0 V |
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I |
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Drain current |
8 |
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4 |
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VG1S = 0.5 V |
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0 |
1 |
2 |
3 |
4 |
5 |
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Gate2 to source voltage |
VG2S |
(V) |
4