HIT 3SK295 Datasheet

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3SK295
Silicon N-Channel Dual Gate MOS FET
ADE-208-387
1st. Edition
Application
UHF RF amplifier
Features
Low noise figure.
Capable of low voltage operation
Outline
1. Source
2. Gate1
3. Gate2
4. Drain
MPAK-4
1
4
3
2
3SK295
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DS
12 V
Gate 1 to source voltage V
G1S
±8V
Gate 2 to source voltage V
G2S
±8V
Drain current I
D
25 mA
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Attention: This device is very sensitive to electro static discharge.
It is recommended to adopt appropriate cautions when handling this transistor.
3SK295
3
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
voltage
V
(BR)DSX
12 V I
D
= 200 µA , V
G1S
= –3 V,
V
G2S
= –3 V
Gate 1 to source breakdown
voltage
V
(BR)G1SS
±8— V I
G1
= ±10 µA, V
G2S
= V
DS
= 0
Gate 2 to source breakdown
voltage
V
(BR) G2SS
±8— V I
G2
= ±10 µA, V
G1S
= V
DS
= 0
Gate 1 cutoff current I
G1SS
——±100 nA V
G1S
= ±6 V, V
G2S
= V
DS
= 0
Gate 2 cutoff current I
G2SS
——±100 nA V
G2S
= ±6 V, V
G1S
= V
DS
= 0
Drain current I
DS(on)
0.5 10 mA V
DS
= 6 V, V
G1S
= 0.5V,
V
G2S
= 3 V
Gate 1 to source cutoff voltage V
G1S(off)
–0.5 +0.5 V V
DS
= 10 V, V
G2S
= 3V,
I
D
= 100 µA
Gate 2 to source cutoff voltage V
G2S(off)
0 +1.0 V V
DS
= 10 V, V
G1S
= 3V,
I
D
= 100 µA
Forward transfer admittance |y
fs
| 16 20.8 mS V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 kHz
Input capacitance Ciss 1.2 1.5 2.2 pF V
DS
= 6 V, V
G2S
= 3V,
I
D
= 10 mA, f = 1 MHz
Output capacitance Coss 0.6 0.9 1.2 pF
Reverse transfer capacitance Crss 0.01 0.03 pF
Power gain PG 16 19.5 dB V
DS
= 4 V, V
G2S
= 3V,
I
D
= 10 mA, f = 900 MHz
Noise figure NF 2.0 3 dB
Note: Marking is “ZQ–”
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