2SK975
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•Low drive current
•4 V gate drive device
Can be driven from 5 V source
•Suitable for motor drive, DC-DC converter, power switch and solenoid drive
Outline
TO-92 Mod
D 321
1. Source
G
2. Drain
3. Gate
S
2SK975
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
60 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
1.5 |
A |
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Drain peak current |
ID(pulse)*1 |
4.5 |
A |
Body to drain diode reverse drain current |
IDR |
1.5 |
A |
Channel dissipation |
Pch |
900 |
mW |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
Max |
Unit |
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Test conditions |
Drain to source breakdown |
V(BR)DSS |
60 |
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— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
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— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltage drain current |
IDSS |
— |
— |
100 |
µA |
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VDS = 50 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
1.0 |
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— |
2.0 |
V |
I D = 1 mA, VDS = 10 V |
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Static drain to source on state |
RDS(off) |
— |
0.3 |
0.4 |
Ω |
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ID = 1 A, VGS = 10 V *1 |
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resistance |
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0.4 |
0.55 |
Ω |
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ID = 1 A, VGS = 4 V *1 |
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Forward transfer admittance |
|yfs| |
0.9 |
1.5 |
— |
S |
I D = 1 A, VDS = 10 V *1 |
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Input capacitance |
Ciss |
— |
140 |
— |
pF |
V |
DS = 10 V, VGS = 0, |
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Output capacitance |
Coss |
— |
70 |
— |
pF |
f = 1 MHz |
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Reverse transfer capacitance |
Crss |
— |
20 |
— |
pF |
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Turn-on delay time |
td(on) |
— |
3 |
— |
ns |
I |
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D = 1 A, VGS = 10 V, |
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Rise time |
tr |
— |
12 |
— |
ns |
R |
L = 30 Ω |
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Turn-off delay time |
td(off) |
— |
50 |
— |
ns |
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Fall time |
tf |
— |
30 |
— |
ns |
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Body to drain diode forward |
VDF |
— |
0.9 |
— |
V |
I |
F = 1.5 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
— |
45 |
— |
ns |
I |
F = 1.5 A, VGS = 0, |
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recovery time |
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diF/dt = 50 A/µs |
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Note: 1. Pulse test
2
2SK975
Power vs. Temperature Derating
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1.5 |
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Pch (W) |
1.0 |
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Dissipation |
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0.5 |
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Channel |
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0 |
50 |
100 |
150 |
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Case Temperature TC (°C) |
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Typical Output Characteristics
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5 |
4.5 V |
Pulse Test |
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10 V |
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5 V |
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4 |
7 V |
4 V |
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(A) |
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D |
3 |
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I |
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3.5 V |
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Current |
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2 |
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Drain |
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3 V |
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1 |
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VGS = 2.5 V |
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6 |
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0 |
2 |
4 |
8 |
10 |
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
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10 |
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10 |
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100 |
μ |
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3 |
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s |
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PW |
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μ |
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1 |
s |
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(A) |
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= |
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ms |
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10 |
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1.0 |
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ms |
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D |
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(1 |
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I |
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DC |
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Current |
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Shot) |
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Operation |
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0.3 |
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Drain |
0.1 |
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Operation in this area |
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is limited by RDS (on) |
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0.03 |
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Ta = 25°C |
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0.01 |
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0.1 |
0.3 |
1.0 |
3 |
10 |
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30 |
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100 |
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Drain to Source Voltage |
VDS (V) |
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Typical Transfer Characteristics
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5 |
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4 |
VDS = 10 V |
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(A) |
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Pulse Test |
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D |
3 |
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I |
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Current |
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2 |
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Drain |
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1 |
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–25°C |
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75°C |
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TC= 25°C |
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0 |
1 |
2 |
3 |
4 |
5 |
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Gate to Source Voltage |
VGS (V) |
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