HIT 2SK975 Datasheet

0 (0)

2SK975

Silicon N-Channel MOS FET

Application

High speed power switching

Features

Low on-resistance

High speed switching

Low drive current

4 V gate drive device

Can be driven from 5 V source

Suitable for motor drive, DC-DC converter, power switch and solenoid drive

Outline

TO-92 Mod

D 321

1. Source

G

2. Drain

3. Gate

S

2SK975

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

60

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

1.5

A

 

 

 

 

Drain peak current

ID(pulse)*1

4.5

A

Body to drain diode reverse drain current

IDR

1.5

A

Channel dissipation

Pch

900

mW

 

 

 

 

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

 

Typ

Max

Unit

 

 

Test conditions

Drain to source breakdown

V(BR)DSS

60

 

V

I

D = 10 mA, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSS

±20

 

V

I

G = ±100 µA, VDS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±10

µA

 

 

VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

100

µA

 

 

VDS = 50 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

 

2.0

V

I D = 1 mA, VDS = 10 V

Static drain to source on state

RDS(off)

0.3

0.4

Ω

 

 

ID = 1 A, VGS = 10 V *1

resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.4

0.55

Ω

 

 

ID = 1 A, VGS = 4 V *1

 

 

 

 

 

 

 

 

Forward transfer admittance

|yfs|

0.9

1.5

S

I D = 1 A, VDS = 10 V *1

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

140

pF

V

DS = 10 V, VGS = 0,

 

 

 

 

 

 

 

 

Output capacitance

Coss

70

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

20

pF

 

 

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

3

ns

I

 

D = 1 A, VGS = 10 V,

Rise time

tr

12

ns

R

L = 30 Ω

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

50

ns

 

 

 

Fall time

tf

30

ns

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode forward

VDF

0.9

V

I

F = 1.5 A, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode reverse

trr

45

ns

I

F = 1.5 A, VGS = 0,

recovery time

 

 

 

 

 

 

 

 

diF/dt = 50 A/µs

 

 

 

 

 

 

 

 

 

 

Note: 1. Pulse test

2

HIT 2SK975 Datasheet

2SK975

Power vs. Temperature Derating

 

1.5

 

 

 

Pch (W)

1.0

 

 

 

Dissipation

 

 

 

0.5

 

 

 

Channel

 

 

 

 

 

 

 

 

0

50

100

150

 

 

Case Temperature TC (°C)

 

Typical Output Characteristics

 

5

4.5 V

Pulse Test

 

10 V

 

 

5 V

 

 

4

7 V

4 V

 

 

 

(A)

 

 

 

D

3

 

 

I

 

3.5 V

Current

 

 

 

2

 

 

Drain

 

3 V

 

 

1

 

 

 

VGS = 2.5 V

 

 

 

 

 

 

6

 

 

0

2

4

8

10

Drain to Source Voltage VDS (V)

Maximum Safe Operation Area

 

10

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

100

μ

 

3

 

 

 

 

 

 

s

 

 

 

 

 

PW

 

μ

 

 

 

 

 

 

 

 

1

s

 

(A)

 

 

 

 

 

=

 

ms

 

 

 

 

 

 

 

10

 

 

1.0

 

 

 

 

 

ms

 

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

(1

 

 

 

 

 

 

 

 

 

 

 

I

 

 

 

 

DC

 

 

 

 

Current

 

 

 

 

 

 

Shot)

 

 

 

 

 

 

Operation

 

 

 

0.3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Drain

0.1

 

 

 

 

 

 

 

Operation in this area

 

 

 

 

 

 

is limited by RDS (on)

 

 

 

 

 

 

0.03

 

Ta = 25°C

 

 

 

 

 

 

 

0.01

 

 

 

 

 

 

 

 

 

 

0.1

0.3

1.0

3

10

 

30

 

100

 

 

 

Drain to Source Voltage

VDS (V)

 

Typical Transfer Characteristics

 

5

 

 

 

4

VDS = 10 V

 

(A)

 

Pulse Test

 

 

 

 

D

3

 

 

I

 

 

Current

 

 

2

 

 

Drain

 

 

1

 

 

 

 

–25°C

 

 

75°C

 

 

TC= 25°C

 

 

 

 

 

 

 

0

1

2

3

4

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to Source Voltage

VGS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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