HIT 2SK740 Datasheet

0 (0)

2SK740

Silicon N-Channel MOS FET

Application

High speed power switching

Features

Low on-resistance

High speed switching

Low drive current

No secondary breakdown

Suitable for switching regulator, DC-DC converter and motor driver

Outline

TO-220AB

D

1

2 3

 

 

1. Gate

G

2. Drain

(Flange)

3. Source

S

2SK740

Absolute Maximum Ratings (Ta = 25°C)

Item

 

Symbol

Ratings

Unit

Drain to source voltage

VDSS

150

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

10

A

 

 

 

 

Drain peak current

ID(pulse)*1

40

A

Body to drain diode reverse drain current

IDR

10

A

Channel dissipation

Pch*2

50

W

 

 

 

 

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

 

Notes: 1.

PW ≤ 10 µs, duty cycle ≤ 1%

 

 

 

2.

Value at TC = 25°C

 

 

 

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test conditions

Drain to source breakdown

V(BR)DSS

150

V

I

D = 10 mA, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±10

µA

 

 

VGS = ±16 V, VDS = 0

Zero gate voltage drain current

IDSS

250

µA

 

 

VDS = 120 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

2.0

4.0

V

I D = 1 mA, VDS = 10 V

Static drain to source on state

RDS(on)

0.12

0.15

Ω

 

 

ID = 5 A, VGS = 10 V *1

resistance

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Forward transfer admittance

|yfs|

4.0

7.0

S

I D = 5 A, VDS = 10 V *1

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

1200

pF

V

DS = 10 V, VGS = 0,

 

 

 

 

 

 

 

 

Output capacitance

Coss

550

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

85

pF

 

 

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

20

ns

I

 

D = 5 A, VGS = 10 V,

Rise time

tr

50

ns

R

L = 6 Ω

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

70

ns

 

 

 

Fall time

tf

40

ns

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode forward

VDF

1.2

V

I

F = 10 A, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Body to drain diode reverse

trr

220

ns

I

F = 10 A, VGS = 0,

recovery time

 

 

 

 

 

 

 

diF/dt = 50 A/µs

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Note: 1. Pulse test

2

HIT 2SK740 Datasheet

2SK740

Power vs. Temperature Derating

 

60

 

 

 

(W)

 

 

 

 

Pch

40

 

 

 

Dissipation

 

 

 

20

 

 

 

Channel

 

 

 

 

 

 

 

 

0

50

100

150

 

 

Case Temperature TC (°C)

 

Typical Output Characteristics

 

20

15V

10 V

Pulse Test

 

16

 

8 V

6 V

 

 

 

(A)

 

 

 

 

 

 

 

D

 

 

 

 

I

12

 

 

5.5 V

Current

 

 

 

 

 

8

 

 

 

Drain

 

 

 

 

 

 

5 V

4

 

 

 

 

 

 

VGS = 4.5 V

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

4

8

12

16

20

 

 

 

 

 

 

 

 

 

 

Drain to Source Voltage

VDS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Safe Operation Area

 

100

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

100

μ

(A)

 

 

 

 

s

 

 

PW

 

 

μ

10

DC

 

1

 

s

 

=

 

 

 

D

 

ms

 

 

 

 

I

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

ms

 

 

Current

 

Operation

(1

 

 

 

Shot)

 

 

 

(T

 

 

 

 

C

Drain

 

 

 

 

=

 

1.0

 

 

 

 

25°C)

 

 

 

 

 

 

 

Operation in this area is

 

 

 

limited by R

 

 

 

 

 

 

 

DS (on)

 

 

 

 

 

0.1

Ta = 25°C

 

 

 

 

 

 

 

 

 

 

 

1

10

100

1,000

 

Drain to Source Voltage

VDS (V)

 

 

Typical Transfer Characteristics

 

20

 

–25°C

 

 

 

 

 

 

75°C

(A)

16

VDS = 10 V

TC = 25°C

 

 

 

Pulse Test

 

D

 

 

 

I

12

 

 

Current

 

 

8

 

 

Drain

 

 

4

 

 

 

 

 

 

 

0

2

4

6

8

10

 

 

 

Gate to Source Voltage VGS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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