2SK740
Silicon N-Channel MOS FET
Application
High speed power switching
Features
•Low on-resistance
•High speed switching
•Low drive current
•No secondary breakdown
•Suitable for switching regulator, DC-DC converter and motor driver
Outline
TO-220AB
D |
1 |
2 3 |
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1. Gate
G
2. Drain
(Flange)
3. Source
S
2SK740
Absolute Maximum Ratings (Ta = 25°C)
Item |
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Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
150 |
V |
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Gate to source voltage |
VGSS |
±20 |
V |
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Drain current |
ID |
10 |
A |
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Drain peak current |
ID(pulse)*1 |
40 |
A |
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Body to drain diode reverse drain current |
IDR |
10 |
A |
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Channel dissipation |
Pch*2 |
50 |
W |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Notes: 1. |
PW ≤ 10 µs, duty cycle ≤ 1% |
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2. |
Value at TC = 25°C |
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Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
Drain to source breakdown |
V(BR)DSS |
150 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
Zero gate voltage drain current |
IDSS |
— |
— |
250 |
µA |
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VDS = 120 V, VGS = 0 |
Gate to source cutoff voltage |
VGS(off) |
2.0 |
— |
4.0 |
V |
I D = 1 mA, VDS = 10 V |
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Static drain to source on state |
RDS(on) |
— |
0.12 |
0.15 |
Ω |
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ID = 5 A, VGS = 10 V *1 |
resistance |
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Forward transfer admittance |
|yfs| |
4.0 |
7.0 |
— |
S |
I D = 5 A, VDS = 10 V *1 |
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Input capacitance |
Ciss |
— |
1200 |
— |
pF |
V |
DS = 10 V, VGS = 0, |
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Output capacitance |
Coss |
— |
550 |
— |
pF |
f = 1 MHz |
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Reverse transfer capacitance |
Crss |
— |
85 |
— |
pF |
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Turn-on delay time |
td(on) |
— |
20 |
— |
ns |
I |
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D = 5 A, VGS = 10 V, |
Rise time |
tr |
— |
50 |
— |
ns |
R |
L = 6 Ω |
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Turn-off delay time |
td(off) |
— |
70 |
— |
ns |
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Fall time |
tf |
— |
40 |
— |
ns |
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Body to drain diode forward |
VDF |
— |
1.2 |
— |
V |
I |
F = 10 A, VGS = 0 |
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voltage |
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Body to drain diode reverse |
trr |
— |
220 |
— |
ns |
I |
F = 10 A, VGS = 0, |
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recovery time |
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diF/dt = 50 A/µs |
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Note: 1. Pulse test
2
2SK740
Power vs. Temperature Derating
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60 |
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(W) |
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Pch |
40 |
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Dissipation |
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20 |
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Channel |
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0 |
50 |
100 |
150 |
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Case Temperature TC (°C) |
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Typical Output Characteristics
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20 |
15V |
10 V |
Pulse Test |
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16 |
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8 V |
6 V |
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(A) |
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D |
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I |
12 |
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5.5 V |
Current |
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8 |
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Drain |
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5 V |
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4 |
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VGS = 4.5 V |
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0 |
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4 |
8 |
12 |
16 |
20 |
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Drain to Source Voltage |
VDS (V) |
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Maximum Safe Operation Area
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100 |
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10 |
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100 |
μ |
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(A) |
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s |
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PW |
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μ |
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10 |
DC |
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1 |
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s |
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= |
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D |
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ms |
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I |
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10 |
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ms |
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Current |
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Operation |
(1 |
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Shot) |
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(T |
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C |
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Drain |
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= |
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1.0 |
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25°C) |
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Operation in this area is |
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limited by R |
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DS (on) |
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0.1 |
Ta = 25°C |
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1 |
10 |
100 |
1,000 |
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Drain to Source Voltage |
VDS (V) |
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Typical Transfer Characteristics |
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20 |
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–25°C |
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75°C |
(A) |
16 |
VDS = 10 V |
TC = 25°C |
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Pulse Test |
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D |
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I |
12 |
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Current |
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8 |
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Drain |
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4 |
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0 |
2 |
4 |
6 |
8 |
10 |
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Gate to Source Voltage VGS (V) |
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