HIT 2SK439 Datasheet

0 (0)
Application
VHF amplifier
Outline
2SK439
Silicon N-Channel MOS FET
1
2
3
1. Gate
2. Source
3. Drain
2SK439
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Gate current I
DS
GSS
D
G
Channel power dissipation Pch 300 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown
V
(BR)DSX
voltage Gate cutoff current I Drain current I Gate to source cutoff voltage V Forward transfer admittance
GSS
DSS
GS(off)
y
fs
Input capacitance Ciss 2.5 pF VDS = 10 V, VGS = 0, f = 1 MHz Reverse transfer capacitance Crss 0.03 pF Output capacitance Coss 1.8 pF VDS = 5 V, VGS = 0, f = 1 MHz Power gain PG 30 dB VDS = 10 V, VGS = 0,
Noise figure NF 2.0 dB Note: 1. The 2SK439 is grouped by I
Grade D E F
I
DSS
4 to 8 6 to 10 8 to 12
20 V ID = 100 µA, VGS = –4 V
——±20 nA VGS = ±5 V, VDS = 0
1
*
4 12 mA V 0 –2.0 V VDS = 10 V, ID = 10 µA 8 14 mS V
as follows.
DSS
20 V ±5V 30 mA ±1mA
= 10 V, VGS = 0
DS
= 10 V, VGS = 0, f = 1 kHz
DS
f = 100 MHz
See characteristic curves of 2SK359.
2
Loading...
+ 3 hidden pages