2SK360
Silicon N-Channel MOS FET
Application
VHF amplifier
Outline
MPAK
3
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1 |
Gate |
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2 |
2. |
Drain |
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3. |
Source |
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2SK360
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSX*1 |
20 |
V |
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Gate to source voltage |
VGSS |
±5 |
V |
Drain current |
ID |
30 |
mA |
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Gate current |
IG |
±1 |
mA |
Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. VGS = –4 V |
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Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
Typ |
Max |
Unit |
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Test conditions |
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Drain to source breakdown |
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V(BR)DSX |
20 |
— |
— |
V |
I |
D = 100 A, VGS = –4 V |
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voltage |
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Gate cutoff current |
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IGSS |
— |
— |
±20 |
nA |
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VGS = ±5 V, VDS = 0 |
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Drain current |
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IDSS*1 |
4 |
— |
12 |
mA |
V DS = 10 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
0 |
— |
–2.0 |
V |
V DS = 10 V, ID = 10 A |
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Forward transfer admittance |
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y |
fs |
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8 |
14 |
— |
mS |
V DS = 10 V, VGS = 0, |
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f = 1 kHz |
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Input capacitance |
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Ciss |
— |
2.5 |
— |
pF |
V |
DS = 10 V, VGS = 0, |
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f = 1 MHz |
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Output capacitance |
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Coss |
— |
1.6 |
— |
pF |
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Reverse transfer capacitance |
Crss |
— |
0.03 |
— |
pF |
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Power gain |
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PG |
— |
30 |
— |
dB |
V |
DS = 10 V, VGS = 0, |
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f = 100 MHz |
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Noise figure |
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NF |
— |
2.0 |
— |
dB |
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Note: 1. The 2SK360 is grouped by IDSS as follows. |
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Grade |
D |
E |
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F |
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Mark |
IGD |
IGE |
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IGF |
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IDSS |
4 to 8 |
6 to 10 |
8 to 12 |
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See characteristic curves of 2SK359.
2