ADE-208-806 (Z) 1st.Edition.
June 1999
Features
•Low on-resistance
RDS =1.26 Ω typ. (VGS = 10 V , ID = 150 mA) RDS = 2.8 Ω typ. (VGS = 4 V , ID = 50 mA)
•4 V gate drive device.
Outline
1. Source
2. Drain
3. Gate
2SK3380
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
300 |
mA |
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Drain peak current |
Note1 |
1.2 |
A |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
300 |
mA |
Channel dissipation |
Pch |
300 |
mW |
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Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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|
Test Conditions |
Drain to source breakdown |
V(BR)DSS |
30 |
— |
— |
V |
I |
D = 100 µA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
— |
±5 |
µA |
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VGS = ±16 V, VDS = 0 |
Zero gate voltege drain |
IDSS |
— |
— |
1 |
µA |
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VDS = 30 V, VGS = 0 |
current |
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Gate to source cutoff voltage |
VGS(off) |
1.3 |
— |
2.3 |
V |
I D = 10µA, VDS = 5 V |
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Static drain to source on state |
RDS(on) |
— |
1.26 |
1.44 |
Ω |
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ID = 150 mA,VGS = 10 V Note 2 |
resistance |
RDS(on) |
— |
2.8 |
3.44 |
Ω |
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ID = 50 mA,VGS = 4 V Note 2 |
Forward transfer admittance |
|yfs| |
145 |
220 |
— |
mS |
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ID = 150 mA, VDS =10 V Note 2 |
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Input capacitance |
Ciss |
— |
6 |
— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
18 |
— |
pF |
V |
|
GS = 0 |
Reverse transfer capacitance |
Crss |
— |
2 |
— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
200 |
— |
ns |
I |
|
D = 150 mA, VGS = 10 V |
Rise time |
tr |
— |
600 |
— |
ns |
R |
L = 66.6 Ω |
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Turn-off delay time |
td(off) |
— |
1100 |
— |
ns |
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Fall time |
tf |
— |
1100 |
— |
ns |
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Note: 2. Pulse test |
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See characteristics curves of 2SK3288
2