HIT 2SK3378 Datasheet

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HIT 2SK3378 Datasheet

2SK3378

Silicon N Channel MOS FET

High Speed Switching

ADE-208-805 (Z) 1st.Edition.

June 1999

Features

Low on-resistance

RDS =2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA)

4 V gate drive device.

Small package (CMPAK)

Outline

CMPAK

3

1

D

2

G

1. Source

2. Gate

3. Drain

S

2SK3378

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

30

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

100

mA

 

 

 

 

Drain peak current

Note1

400

mA

ID(pulse)

Body-drain diode reverse drain current

IDR

100

mA

Channel dissipation

Pch Note 2

300

mW

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

 

 

 

 

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

 

 

 

2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)

Electrical Characteristics (Ta = 25°C)

Item

 

Symbol

Min

Typ

Max

Unit

 

 

Test Conditions

Drain to source breakdown

V(BR)DSS

30

V

I

D = 100 µA, VGS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source leak current

IGSS

±5

µA

 

 

VGS = ±16 V, VDS = 0

Zero gate voltege drain

IDSS

1

µA

 

 

VDS = 30 V, VGS = 0

current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source cutoff voltage

VGS(off)

1.3

2.3

V

I D = 10µA, VDS = 5 V

Static drain to source on state

RDS(on)

2.7

3.5

Ω

 

 

ID = 50 mA,VGS = 10 V Note 3

resistance

 

RDS(on)

4.7

7.0

Ω

 

 

ID = 20 mA,VGS = 4 V Note 3

Forward transfer admittance

|yfs|

55

85

mS

 

 

ID = 50 mA, VDS =10 V Note 3

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

1.6

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

7

pF

V

 

GS = 0

Reverse transfer capacitance

Crss

0.5

pF

f = 1 MHz

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

100

ns

I

 

D = 50 mA, VGS = 10 V

Rise time

 

tr

330

ns

R

L = 200 Ω

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

1150

ns

 

 

 

Fall time

 

tf

940

ns

 

 

 

 

 

 

 

 

 

 

 

 

 

Note: 3.

Pulse test

 

 

 

 

 

 

 

 

4.

Marking is EN

 

 

 

 

 

 

 

 

See characteristics curves of 2SK3288

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