HIT 2SK3349 Datasheet

0 (0)
Silicon N Channel MOS FET
High Speed Switching
Features
Low on-resistance
RDS = 2.8 typ. (at VGS = 4 V , ID = 25 mA) RDS = 4.8 typ. (at VGS = 2.5 V , ID = 10 mA)
2.5 V gate drive device
Small package (SMPAK)
Outline
2SK3349
ADE-208-804 (Z)
1st.Edition.
June 1999
SMPAK
G
3
1
2
D
1. Source
2. Gate
3. Drain
S
2SK3349
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note1
Note 2
Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10 µs, duty cycle 1%
2. Value on the alumina ceramic board (12.5x20x0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage Gate to source breakdown
V
(BR)GSS
voltage Gate to source leak current I Zero gate voltege drain
GSS
I
DSS
current Gate to source cutoff voltage V Static drain to source on state R resistance R
GS(off)
DS(on)
DS(on)
Forward transfer admittance |yfs|5685—mSI Input capacitance Ciss 6 pF VDS = 10 V Output capacitance Coss 7 pF VGS = 0 Reverse transfer capacitance Crss 1.2 pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t
d(on)
r
d(off)
f
Note: 3. Pulse test
4. Marking is DN
20——V I
±10——V I
——±5 µAV ——1 µAV
0.8 1.8 V ID = 10 µA, VDS = 5 V — 2.8 3.6 I 4.8 7.2 I
120 ns ID = 25 mA, VGS = 4 V — 450 ns RL = 400 480 ns — 500 ns
20 V ±10 V 50 mA 200 mA 50 mA 100 mW
= 100 µA, VGS = 0
D
= ±100 µA, VDS = 0
G
= ±8 V, VDS = 0
GS
= 20 V, VGS = 0
DS
= 25 mA,VGS = 4 V
D
= 10 mA,VGS = 2.5 V
D
= 25 mA, VDS = 10 V
D
Note 3
Note 3
Note 3
2
Main Characteristics
2SK3349
200
Power vs. Temperature Derating
150
100
50
Channel Dissipation *Pch (mW)
0
50 100 150 200
Ambient Temperature Ta ( °C)
*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
5 V
0.2 4 V
Pulse Test
3 V
0.16
D
0.12
Maximum Safe Operation Area
5
2
1.0
0.5
D
0.2
0.1
0.05
0.02
0.01
0.005
Drain Current I (A)
0.002
0.001
0.0005
Operation in this area is limited by RDS(on)
0.05
0.1 1.0 10 50
0.2 0.5
Drain to Source Voltage V (V)
Value on the alumina ceramic boad.(12.5x20x0.7mm)
DC Operation
25
DS
PW = 10 ms
(1 shot)
20
Typical Transfer Characteristics
0.2 V = 10 V
DS
Pulse Test
0.16
D
0.12
10 µs
100 µs
1 ms
0.08
Drain Current I (A)
0.04
0
246810
Drain to Source Voltage V (V)
V = 2V
GS
DS
0.08
Drain Current I (A)
0.04
0
75 °C
12345
Gate to Source Voltage V (V)
25 °C
Tc = –25 °C
GS
3
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