2SK3348
Silicon N Channel MOS FET
High Speed Switching
ADE-208-772 A (Z) 2nd.Edition.
June 1999
Features
•Low on-resistance
RDS = 1.6 Ω typ. (VGS = 4 V , ID = 50 mA) RDS = 2.2 Ω typ. (VGS = 2.5 V , ID = 50 mA)
•2.5 V gate drive device.
•Small package (CMPAK)
Outline
CMPAK
3
1
D
2
G |
1. Source |
2. Gate
3. Drain
S
2SK3348
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
20 |
V |
Gate to source voltage |
VGSS |
±10 |
V |
Drain current |
ID |
100 |
mA |
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Drain peak current |
Note1 |
400 |
mA |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
100 |
mA |
Channel dissipation |
Pch Note 2 |
300 |
mW |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% |
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2. Value on the alumina ceramic board (12.5x20x0.7mm)
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
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Typ |
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Max |
Unit |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
20 |
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— |
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V |
I |
D = 100 µA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±10 |
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— |
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V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
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— |
±5 |
µA |
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VGS = ±8 V, VDS = 0 |
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Zero gate voltege drain |
IDSS |
— |
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— |
1 |
µA |
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VDS = 20 V, VGS = 0 |
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current |
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Gate to source cutoff voltage |
VGS(off) |
0.8 |
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— |
1.8 |
V |
I D = 10µA, VDS = 5 V |
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Static drain to source on state |
RDS(on) |
— |
1.6 |
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1.9 |
Ω |
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ID = 50 mA,VGS = 4 V Note 3 |
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resistance |
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RDS(on) |
— |
2.2 |
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3.2 |
Ω |
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ID = 50 mA,VGS = 2.5 V Note 3 |
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Forward transfer admittance |
|yfs| |
143 |
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220 |
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— |
mS |
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ID = 50 mA, VDS = 10 V Note 3 |
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Input capacitance |
Ciss |
— |
18 |
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— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
15 |
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— |
pF |
V |
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GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
5 |
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— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
73 |
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— |
ns |
I |
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D = 50 mA, VGS = 4 V |
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Rise time |
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tr |
— |
290 |
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— |
ns |
R |
L = 200Ω |
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Turn-off delay time |
td(off) |
— |
360 |
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— |
ns |
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Fall time |
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tf |
— |
360 |
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— |
ns |
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Note: 3. |
Pulse test |
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4. |
Marking is CN |
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2
2SK3348
Main Characteristics
Power vs. Temperature Derating
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400 |
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(mW) |
300 |
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*Pch |
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Disspation |
200 |
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Channel |
100 |
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0 |
50 |
100 |
150 |
200 |
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Ambient Temperature |
Ta ( °C) |
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*Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Output Characteristics
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10 V |
8 V |
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1.0 |
6 V |
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Pulse Test |
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(A) |
0.8 |
5 V |
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VGS = 4 V |
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3 V |
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D |
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I |
0.6 |
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Drain Current |
0.4 |
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0.2 |
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2 V |
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1 V |
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0 |
2 |
4 |
6 |
8 |
10 |
Drain to Source Voltage VDS (V)
Maximum Safe Operation Area
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5 |
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2 |
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10 µs |
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100 µs |
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(A) |
1.0 |
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1 ms |
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0.5 |
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D |
0.2 |
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PW = 10 ms |
I |
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Current |
0.1 |
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(1 shot) |
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DC |
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0.05 |
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0.02 |
Operation in this area |
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Drain |
0.01 |
is limited by RDS(on) |
Operation |
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0.005 |
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0.002 |
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0.001 |
Ta = 25 |
°C |
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0.0005 |
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5 |
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0.05 0.1 |
0.2 |
0.5 |
1.0 |
2 |
10 |
20 |
50 |
Drain to Source Voltage VDS (V)
Value on the alumina ceramic boad.(12.5x20x0.7mm)
Typical Transfer Characteristics
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0.5 |
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V DS = 10 V |
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0.4 |
Pulse Test |
(A) |
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D |
0.3 |
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I |
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Drain Current |
0.2 |
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0.1 |
Tc = –25 °C |
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75 °C |
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25 °C |
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0 |
1 |
2 |
3 |
4 |
5 |
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Gate to Source Voltage |
VGS |
(V) |
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3