2SK3288
Silicon N Channel MOS FET
High Speed Switching
ADE-208-803 (Z) 1st.Edition.
June 1999
Features
•Low on-resistance
RDS = 2.7 Ω typ. (VGS = 10 V , ID = 50 mA) RDS = 4.7 Ω typ. (VGS = 4 V , ID = 20 mA)
•4 V gate drive device.
•Small package (MPAK)
Outline
MPAK
3
1
D
2
G |
1. Source |
2. Gate
3. Drain
S
2SK3288
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
30 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
100 |
mA |
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Drain peak current |
Note1 |
400 |
mA |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
100 |
mA |
Channel dissipation |
Pch Note 2 |
400 |
mW |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
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Note: 1. PW ≤ 10 µs, duty cycle ≤ 1% |
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2. Value on the alumina ceramic board (12.5 x 20 x 0.7 mm)
Electrical Characteristics (Ta = 25°C)
Item |
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Symbol |
Min |
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Typ |
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Max |
Unit |
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Test Conditions |
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Drain to source breakdown |
V(BR)DSS |
30 |
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— |
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V |
I |
D = 100 µA, VGS = 0 |
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voltage |
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Gate to source breakdown |
V(BR)GSS |
±20 |
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— |
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V |
I |
G = ±100 µA, VDS = 0 |
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voltage |
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Gate to source leak current |
IGSS |
— |
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— |
±5 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltege drain |
IDSS |
— |
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— |
1 |
µA |
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VDS = 30 V, VGS = 0 |
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current |
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Gate to source cutoff voltage |
VGS(off) |
1.3 |
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— |
2.3 |
V |
I D = 10µA, VDS = 5 V |
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Static drain to source on state |
RDS(on) |
— |
2.7 |
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3.5 |
Ω |
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ID = 50 mA,VGS = 10 V Note 3 |
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resistance |
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RDS(on) |
— |
4.7 |
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7.0 |
Ω |
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ID = 20 mA,VGS = 4 V Note 3 |
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Forward transfer admittance |
|yfs| |
55 |
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85 |
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— |
mS |
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ID = 50 mA, VDS = 10 V Note 3 |
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Input capacitance |
Ciss |
— |
3 |
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— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
8 |
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— |
pF |
V |
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GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
1 |
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— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
100 |
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— |
ns |
I |
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D = 50 mA, VGS = 10 V |
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Rise time |
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tr |
— |
300 |
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— |
ns |
R |
L = 200 Ω |
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Turn-off delay time |
td(off) |
— |
1100 |
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— |
ns |
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Fall time |
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tf |
— |
900 |
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— |
ns |
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Note: 3. |
Pulse test |
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4. |
Marking is EN |
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2
2SK3288
Main Characteristics
Channel Dissipation *Pch (W)
Power vs. Tenperature Derating |
Maximum Safe Operation Area |
800 |
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5 |
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2 |
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(A) |
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1.0 |
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10 µs |
600 |
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0.5 |
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D |
0.2 |
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100 µs |
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1 ms |
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0.1 |
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Current |
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DC |
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PW = 10 ms |
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400 |
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0.05 |
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Operation |
(1 shot) |
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0.01 |
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0.02 |
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200 |
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Drain |
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0.005 |
Operation in this area |
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is limited by RDS(on) |
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0.002 |
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0.001 |
Ta=25°C |
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0.0005 |
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50 |
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0 |
50 |
100 |
150 |
200 |
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0.05 0.1 |
0.2 |
0.5 |
1.0 |
2 |
5 |
10 |
20 |
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Ambient Temperature |
Ta (°C) |
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Drain to Source Voltage |
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VDS |
(V) |
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*Value on the alumina ceramic boad. (12.5x20x0.7mm) |
Value on the alumina ceramic boad. (12.5x20x0.7mm) |
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Typical Output Characteristics |
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0.5 |
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8 V |
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7 V |
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6 V |
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(A) |
0.4 |
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Pulse Test |
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D |
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5 V |
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I |
0.3 |
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Current |
0.2 |
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4 V |
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Drain |
0.1 |
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VGS = 3V |
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0 |
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2 |
4 |
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10 |
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Drain to Source Voltage |
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VDS |
(V) |
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Drain Current I D (mA)
Typical Transfer Characteristics
500
75°C
400
25°C
Tc = –25°C
300
200
100
V DS = 10 V
Pulse Test
0 |
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2 |
4 |
6 |
8 |
10 |
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Gate to Sourve Voltage |
VGS |
(V) |
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3