2SK3228
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-765A(Z) Target specification 2nd. Edition December 1998
Features
•Low on-resistance RDS(on) =6mΩ typ.
•Low drive current
•4V gate drive device can be driven from 5V source
Outline
TO–220AB
D
G |
|
|
|
1. |
Gate |
1 |
2. |
Drain(Flange) |
2 |
3. |
Source |
3 |
||
S |
|
|
2SK3228
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
80 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
75 |
A |
|
|
|
|
Drain peak current |
ID(pulse)*1 |
300 |
A |
Body-drain diode reverse drain current |
IDR |
75 |
A |
Avalanche current |
IAP*3 |
50 |
A |
|
|
|
|
Avalanche energy |
EAR*3 |
181 |
mJ |
|
|
|
|
Channel dissipation |
Pch*2 |
100 |
W |
|
|
|
|
Channel temperature |
Tch |
150 |
°C |
|
|
|
|
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2.Value at Tc = 25°C
3.Value at Tch = 25°C, Rg ≥ 50Ω
2