2SK322
Silicon N-Channel Junction FET
Application
HF wide band amplifier
Outline
MPAK
3
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1 |
Drain |
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2. |
Source |
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Gate |
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2SK322
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Gate to drain voltage |
VGDO |
–15 |
V |
Gate to source voltage |
VGSO |
–15 |
V |
Drain current |
ID |
50 |
mA |
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Gate current |
IG |
5 |
mA |
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Channel power dissipation |
Pch |
150 |
mW |
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Channel temperature |
Tch |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
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Symbol |
Min |
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Typ |
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Max |
Unit |
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Test conditions |
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Gate to drain breakdown |
V(BR)GDO |
–15 |
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— |
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— |
V |
I |
G = –100 A |
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voltage |
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Gate to source breakdown |
V(BR)GSO |
–15 |
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— |
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— |
V |
I |
G = –100 A |
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voltage |
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Gate cutoff current |
IGSS |
— |
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— |
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–10 |
nA |
V |
GS = –7 V, VDS = 0 |
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Drain current |
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IDSS*1 |
5 |
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— |
50 |
mA |
V DS = 5 V, VGS = 0 (pulse) |
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Gate to source cutoff voltage |
VGS(off) |
— |
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— |
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–3.0 |
V |
V |
DS = 5 V, ID = 100 A |
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Forward transfer admittance |
|yfs| |
25 |
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45 |
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— |
mS |
V DS = 5 V, VGS = 0, f = 1 kHz |
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Note: 1. The 2SK322 is grouped by IDSS as follows. |
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Grade |
P |
Q |
R |
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S |
T |
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Mark |
WP |
WQ |
WR |
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WS |
WT |
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IDSS |
5 to 16 |
14 to 24 |
20 to 32 |
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28 to 42 |
36 to 50 |
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