HIT 2SK322 Datasheet

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HIT 2SK322 Datasheet

2SK322

Silicon N-Channel Junction FET

Application

HF wide band amplifier

Outline

MPAK

3

 

1

Drain

 

1.

2

2.

Source

3.

Gate

 

2SK322

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Gate to drain voltage

VGDO

–15

V

Gate to source voltage

VGSO

–15

V

Drain current

ID

50

mA

 

 

 

 

Gate current

IG

5

mA

 

 

 

 

Channel power dissipation

Pch

150

mW

 

 

 

 

Channel temperature

Tch

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

 

Symbol

Min

 

 

Typ

 

 

 

 

 

Max

Unit

 

Test conditions

Gate to drain breakdown

V(BR)GDO

–15

 

 

 

 

 

V

I

G = –100 A

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to source breakdown

V(BR)GSO

–15

 

 

 

 

 

V

I

G = –100 A

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate cutoff current

IGSS

 

 

–10

nA

V

GS = –7 V, VDS = 0

Drain current

 

IDSS*1

5

 

 

 

 

 

 

50

mA

V DS = 5 V, VGS = 0 (pulse)

 

 

 

 

 

 

 

 

 

 

 

Gate to source cutoff voltage

VGS(off)

 

 

–3.0

V

V

DS = 5 V, ID = 100 A

Forward transfer admittance

|yfs|

25

 

 

 

 

45

 

 

 

 

 

 

mS

V DS = 5 V, VGS = 0, f = 1 kHz

 

 

 

 

 

 

 

 

 

 

 

Note: 1. The 2SK322 is grouped by IDSS as follows.

 

 

 

 

 

 

 

 

 

 

Grade

P

Q

R

 

 

 

 

 

 

 

 

S

T

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Mark

WP

WQ

WR

 

 

 

 

 

 

 

 

WS

WT

 

 

 

 

 

 

 

 

 

 

IDSS

5 to 16

14 to 24

20 to 32

 

28 to 42

36 to 50

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

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