HIT 2SK3215 Datasheet

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HIT 2SK3215 Datasheet

2SK3215

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-764(Z)

Target Specification

1st. Edition

December 1998

Features

Low on-resistance RDS =350mΩ typ.

High speed switching

4V gate drive device can be driven from 5V source

Outline

TO–220AB

D

 

 

G

 

 

 

1.

Gate

1

2.

Drain(Flange)

2

3.

Source

3

S

 

 

2SK3215

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

200

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

8

A

 

 

 

 

Drain peak current

Note1

32

A

ID(pulse)

Body-drain diode reverse drain current

IDR

8

A

Avalanche current

Note3

8

A

IAP

Avalanche energy

EAR Note3

4.2

mJ

 

 

 

 

Channel dissipation

Pch Note2

40

W

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

200

V

I

D = 10mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

V

I

G = ±100µA, VDS = 0

Gate to source leak current

IGSS

±10

µA

 

 

VGS = ±16V, VDS = 0

Zero gate voltege drain current

IDSS

10

µA

 

 

VDS = 200 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.5

V

I D = 1mA, VDS = 10V

Static drain to source on state

RDS(on)

0.35

0.40

Ω

 

 

ID =4A, VGS = 10VNote4

resistance

RDS(on)

0.40

0.55

Ω

 

 

ID =4A, VGS = 4V Note4

Forward transfer admittance

|yfs|

4

6.5

S

I D =4A, VDS = 10V Note4

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

410

pF

V

DS = 10V

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

150

pF

V

 

GS = 0

Reverse transfer capacitance

Crss

90

pF

f = 1MHz

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

10

ns

I

 

D =4A, VGS = 10V

Rise time

tr

45

ns

R

L = 7.5Ω

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

100

ns

 

 

 

Fall time

tf

60

ns

 

 

 

 

 

 

 

 

 

 

 

Body–drain diode forward voltage

VDF

0.95

V

I

F = 8A, VGS = 0

Body–drain diode reverse

trr

100

ns

I

F = 8A, VGS = 0

recovery time

 

 

 

 

 

 

 

diF/ dt =50A/µs

Note: 4. Pulse test

2

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