2SK3215
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-764(Z)
Target Specification
1st. Edition
December 1998
Features
•Low on-resistance RDS =350mΩ typ.
•High speed switching
•4V gate drive device can be driven from 5V source
Outline
TO–220AB
D |
|
|
G |
|
|
|
1. |
Gate |
1 |
2. |
Drain(Flange) |
2 |
3. |
Source |
3 |
||
S |
|
|
2SK3215
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
200 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
8 |
A |
|
|
|
|
Drain peak current |
Note1 |
32 |
A |
ID(pulse) |
|||
Body-drain diode reverse drain current |
IDR |
8 |
A |
Avalanche current |
Note3 |
8 |
A |
IAP |
|||
Avalanche energy |
EAR Note3 |
4.2 |
mJ |
|
|
|
|
Channel dissipation |
Pch Note2 |
40 |
W |
Channel temperature |
Tch |
150 |
°C |
|
|
|
|
Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2.Value at Tc = 25°C
3.Value at Tch = 25°C, Rg ≥ 50Ω
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
|
|
Test Conditions |
Drain to source breakdown voltage |
V(BR)DSS |
200 |
— |
— |
V |
I |
D = 10mA, VGS = 0 |
|
Gate to source breakdown voltage |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100µA, VDS = 0 |
|
Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
|
|
VGS = ±16V, VDS = 0 |
Zero gate voltege drain current |
IDSS |
— |
— |
10 |
µA |
|
|
VDS = 200 V, VGS = 0 |
Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.5 |
V |
I D = 1mA, VDS = 10V |
||
Static drain to source on state |
RDS(on) |
— |
0.35 |
0.40 |
Ω |
|
|
ID =4A, VGS = 10VNote4 |
resistance |
RDS(on) |
— |
0.40 |
0.55 |
Ω |
|
|
ID =4A, VGS = 4V Note4 |
Forward transfer admittance |
|yfs| |
4 |
6.5 |
— |
S |
I D =4A, VDS = 10V Note4 |
||
|
|
|
|
|
|
|
|
|
Input capacitance |
Ciss |
— |
410 |
— |
pF |
V |
DS = 10V |
|
|
|
|
|
|
|
|
|
|
Output capacitance |
Coss |
— |
150 |
— |
pF |
V |
|
GS = 0 |
Reverse transfer capacitance |
Crss |
— |
90 |
— |
pF |
f = 1MHz |
||
|
|
|
|
|
|
|
|
|
Turn-on delay time |
td(on) |
— |
10 |
— |
ns |
I |
|
D =4A, VGS = 10V |
Rise time |
tr |
— |
45 |
— |
ns |
R |
L = 7.5Ω |
|
|
|
|
|
|
|
|
|
|
Turn-off delay time |
td(off) |
— |
100 |
— |
ns |
|
|
|
Fall time |
tf |
— |
60 |
— |
ns |
|
|
|
|
|
|
|
|
|
|
|
|
Body–drain diode forward voltage |
VDF |
— |
0.95 |
— |
V |
I |
F = 8A, VGS = 0 |
|
Body–drain diode reverse |
trr |
— |
100 |
— |
ns |
I |
F = 8A, VGS = 0 |
|
recovery time |
|
|
|
|
|
|
|
diF/ dt =50A/µs |
Note: 4. Pulse test
2