2SK3161(L), 2SK3161(S)
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-734A (Z) 2nd. Edition February 1999
Features
•Low on-resistance RDS = 90 mΩ typ.
•High speed switching
•4 V gate drive device can be driven from 5 V source
Outline
LDPAK
4 |
4 |
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D |
1 |
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1 2 |
1. |
Gate |
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2. |
Drain |
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3. |
Source |
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4. |
Drain |
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2SK3161(L),2SK3161(S)
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
200 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
15 |
A |
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Drain peak current |
Note1 |
60 |
A |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
15 |
A |
Avalanche current |
Note3 |
15 |
A |
IAP |
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Avalanche energy |
EAR Note3 |
15 |
mJ |
Channel dissipation |
Pch Note2 |
75 |
W |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.Value at Tc = 25°C
3.Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Conditions |
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Drain to source breakdown voltage |
V(BR)DSS |
200 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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Gate to source breakdown voltage |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltege drain current |
IDSS |
— |
— |
10 |
µA |
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VDS = 200 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.5 |
V |
I D = 1 mA, VDS = 10 V |
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Static drain to source on state |
RDS(on) |
— |
90 |
115 |
m Ω |
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ID = 8 |
A, VGS = 10 VNote4 |
resistance |
RDS(on) |
— |
95 |
125 |
m Ω |
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ID = 8 |
A, VGS = 4 V Note4 |
Forward transfer admittance |
|yfs| |
16 |
20 |
— |
S |
I D = 8 |
A, VDS = 10 V Note4 |
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Input capacitance |
Ciss |
— |
1600 |
— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
510 |
— |
pF |
V |
GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
250 |
— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
20 |
— |
ns |
I |
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D = 8 |
A, VGS = 10 V |
Rise time |
tr |
— |
120 |
— |
ns |
R |
L = 3.75 Ω |
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Turn-off delay time |
td(off) |
— |
400 |
— |
ns |
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Fall time |
tf |
— |
170 |
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ns |
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Body–drain diode forward voltage |
VDF |
— |
0.85 |
— |
V |
I |
F = 15 A, VGS = 0 |
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Body–drain diode reverse |
trr |
— |
100 |
— |
ns |
I |
F = 15 A, VGS = 0 |
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recovery time |
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diF/ dt = 50 A/ µs |
Note: 4. Pulse test
2
2SK3161(L),2SK3161(S)
Main Characteristics
Channel Dissipation Pch (W)
Power vs. Temperature Derating
80
60
40
20
0 |
50 |
100 |
150 |
200 |
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Case Temperature |
Tc (°C) |
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Maximum Safe Operation Area
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100 |
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30 |
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10 |
µs |
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(A) |
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100 |
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1 |
µs |
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10 |
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ms |
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PW |
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I |
3 |
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Current |
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DC |
=10 |
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ms |
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1 |
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Operation |
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(1shot) |
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(Tc |
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Operation in |
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Drain |
0.3 |
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25°C) |
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this area is |
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0.1 |
limited by R DS(on) |
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0.03 |
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0.01 |
Ta = 25 °C |
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5 |
10 |
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20 |
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50 |
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100 200 |
500 |
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1 |
2 |
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Drain to Source Voltage |
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V DS (V) |
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Typical Output Characteristics
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50 |
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20 |
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Pulse Test |
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10 V |
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40 |
6 V |
4 V |
16 |
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(A) |
(A) |
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D |
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3.5 V |
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D |
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I |
30 |
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12 |
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I |
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Drain Current |
20 |
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3 V |
8 |
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10 |
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CurrentDrain |
4 |
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VGS =2.5 V |
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Typical Transfer Characteristics
V DS = 10 V
Pulse Test
Tc = 75°C |
–25°C |
25°C
0 |
2 |
4 |
6 |
8 |
10 |
0 |
1 |
2 |
3 |
4 |
5 |
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Drain to Source Voltage |
VDS (V) |
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Gate to Source Voltage |
V GS (V) |
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