2SK3159
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-774 (Z)
Target Specification
1st. Edition
February 1999
Features
•Low on-resistance RDS = 23 mΩ typ.
•High speed switching
•4 V gate drive device can be driven from 5 V source
Outline
TO–3P
D |
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G |
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1. |
Gate |
1 |
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2. |
Drain |
2 |
3 |
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(Flange) |
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3. |
Source |
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S |
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2SK3159
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Drain to source voltage |
VDSS |
150 |
V |
Gate to source voltage |
VGSS |
±20 |
V |
Drain current |
ID |
50 |
A |
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Drain peak current |
Note1 |
200 |
A |
ID(pulse) |
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Body-drain diode reverse drain current |
IDR |
50 |
A |
Avalanche current |
Note3 |
50 |
A |
IAP |
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Avalanche energy |
EAR Note3 |
187 |
mJ |
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Channel dissipation |
Pch Note2 |
125 |
W |
Channel temperature |
Tch |
150 |
°C |
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Storage temperature |
Tstg |
–55 to +150 |
°C |
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2.Value at Tc = 25°C
3.Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
Typ |
Max |
Unit |
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Test Conditions |
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Drain to source breakdown voltage |
V(BR)DSS |
150 |
— |
— |
V |
I |
D = 10 mA, VGS = 0 |
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Gate to source breakdown voltage |
V(BR)GSS |
±20 |
— |
— |
V |
I |
G = ±100 µA, VDS = 0 |
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Gate to source leak current |
IGSS |
— |
— |
±10 |
µA |
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VGS = ±16 V, VDS = 0 |
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Zero gate voltege drain current |
IDSS |
— |
— |
10 |
µA |
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VDS = 150 V, VGS = 0 |
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Gate to source cutoff voltage |
VGS(off) |
1.0 |
— |
2.5 |
V |
I D = 1 mA, VDS = 10 V |
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Static drain to source on state |
RDS(on) |
— |
23 |
30 |
m Ω |
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ID = 25 |
A, VGS = 10 VNote4 |
resistance |
RDS(on) |
— |
28 |
48 |
m Ω |
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ID = 25 |
A, VGS = 4 V Note4 |
Forward transfer admittance |
|yfs| |
27 |
45 |
— |
S |
I D = 25 |
A, VDS = 10 V Note4 |
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Input capacitance |
Ciss |
— |
4000 |
— |
pF |
V |
DS = 10 V |
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Output capacitance |
Coss |
— |
1650 |
— |
pF |
V |
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GS = 0 |
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Reverse transfer capacitance |
Crss |
— |
590 |
— |
pF |
f = 1 MHz |
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Turn-on delay time |
td(on) |
— |
30 |
— |
ns |
I |
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D = 25 |
A, VGS = 10 V |
Rise time |
tr |
— |
280 |
— |
ns |
R |
L = 1.2 Ω |
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Turn-off delay time |
td(off) |
— |
830 |
— |
ns |
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Fall time |
tf |
— |
450 |
— |
ns |
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Body–drain diode forward voltage |
VDF |
— |
0.95 |
— |
V |
I |
F = 50 A, VGS = 0 |
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Body–drain diode reverse |
trr |
— |
200 |
— |
ns |
I |
F = 50 A, VGS = 0 |
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recovery time |
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diF/ dt = 50 A/ µs |
Note: 4. Pulse test
2