HIT 2SK3159 Datasheet

2SK3159

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-774 (Z)

Target Specification

1st. Edition

February 1999

Features

•Low on-resistance RDS = 23 mΩ typ.

•High speed switching

•4 V gate drive device can be driven from 5 V source

Outline

TO–3P

D
G
		1.	Gate
1		2.	Drain
2	3		(Flange)
		3.	Source
S

2SK3159

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	150	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	50	A
Drain peak current	Note1	200	A
	ID(pulse)
Body-drain diode reverse drain current	IDR	50	A
Avalanche current	Note3	50	A
	IAP
Avalanche energy	EAR Note3	187	mJ
Channel dissipation	Pch Note2	125	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test Conditions
Drain to source breakdown voltage	V(BR)DSS	150	—	—	V	I		D = 10 mA, VGS = 0
Gate to source breakdown voltage	V(BR)GSS	±20	—	—	V	I		G = ±100 µA, VDS = 0
Gate to source leak current	IGSS	—	—	±10	µA			VGS = ±16 V, VDS = 0
Zero gate voltege drain current	IDSS	—	—	10	µA			VDS = 150 V, VGS = 0
Gate to source cutoff voltage	VGS(off)	1.0	—	2.5	V	I D = 1 mA, VDS = 10 V
Static drain to source on state	RDS(on)	—	23	30	m Ω			ID = 25	A, VGS = 10 VNote4
resistance	RDS(on)	—	28	48	m Ω			ID = 25	A, VGS = 4 V Note4
Forward transfer admittance	|yfs|	27	45	—	S	I D = 25			A, VDS = 10 V Note4
Input capacitance	Ciss	—	4000	—	pF	V		DS = 10 V
Output capacitance	Coss	—	1650	—	pF	V		GS = 0
Reverse transfer capacitance	Crss	—	590	—	pF	f = 1 MHz
Turn-on delay time	td(on)	—	30	—	ns	I		D = 25	A, VGS = 10 V
Rise time	tr	—	280	—	ns	R		L = 1.2 Ω
Turn-off delay time	td(off)	—	830	—	ns
Fall time	tf	—	450	—	ns
Body–drain diode forward voltage	VDF	—	0.95	—	V	I		F = 50 A, VGS = 0
Body–drain diode reverse	trr	—	200	—	ns	I		F = 50 A, VGS = 0
recovery time								diF/ dt = 50 A/ µs

Note: 4. Pulse test

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