HIT 2SK3157 Datasheet

0 (0)

2SK3157

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-769A (Z) 2nd. Edition Februaty 1999

Features

Low on-resistance RDS = 50 mΩ typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

TO–220FM

D

 

 

 

G

 

1.

Gate

 

 

 

 

2.

Drain

1

2

3.

Source

3

 

 

 

 

S

2SK3157

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

150

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

20

A

 

 

 

 

Drain peak current

Note1

80

A

ID(pulse)

Body-drain diode reverse drain current

IDR

20

A

Avalanche current

Note3

20

A

IAP

Avalanche energy

EAR Note3

30

mJ

 

 

 

 

Channel dissipation

Pch Note2

35

W

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

150

V

I

D = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

IGSS

±10

µA

 

 

VGS = ±16 V, VDS = 0

Zero gate voltege drain current

IDSS

10

µA

 

 

VDS = 150 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.5

V

I D = 1 mA, VDS = 10 V

Static drain to source on state

RDS(on)

50

70

m Ω

 

 

ID = 10

A, VGS = 10 VNote4

resistance

RDS(on)

60

80

m Ω

 

 

ID = 10

A, VGS = 4 V Note4

Forward transfer admittance

|yfs|

13

22

S

I D = 10

A, VDS = 10 V Note4

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

1750

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

600

pF

V

 

GS = 0

 

Reverse transfer capacitance

Crss

300

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

18

ns

I

 

D = 10

A, VGS = 10 V

Rise time

tr

125

ns

R

L = 3 Ω

 

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

400

ns

 

 

 

 

Fall time

tf

190

ns

 

 

 

 

 

 

 

 

 

 

 

 

Body–drain diode forward voltage

VDF

0.9

V

I

F = 20 A, VGS = 0

Body–drain diode reverse

trr

170

ns

I

F = 20 A, VGS = 0

recovery time

 

 

 

 

 

 

 

diF/ dt

= 50 A/ µs

Note: 4. Pulse test

2

HIT 2SK3157 Datasheet

2SK3157

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

 

40

 

 

 

 

(W)

30

 

 

 

(A)

Pch

 

 

 

D

 

 

 

 

 

 

 

 

I

Channel Dissipation

20

 

 

 

Drain Current

10

 

 

 

 

 

 

 

 

0

50

100

150

200

Case Temperature Tc (°C)

500

 

 

 

 

 

 

 

 

 

 

 

200

 

 

 

 

 

 

 

 

 

 

 

100

 

 

 

 

 

 

 

 

 

 

 

50

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

100

 

 

 

20

 

 

PW

 

 

 

s

 

 

 

 

 

 

 

1

 

 

 

10

 

 

=

 

ms

 

s

 

 

 

DC

10

 

 

 

 

 

5

 

 

ms(1shot)

 

 

 

 

 

 

 

 

 

 

2

 

(Tc

 

 

 

 

1

Operation in

=

 

 

 

 

 

 

 

Operation

 

 

 

 

 

 

this area is

25

 

 

 

 

 

 

 

0.5

 

°

 

 

 

 

 

 

 

 

C)

 

 

 

 

 

0.2

limited by R DS(on)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.1

Ta = 25°C

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

10

 

30

 

 

100

300

1000

0.1

0.3

1

3

 

 

 

 

Drain to Source Voltage

 

 

V DS (V)

 

Typical Output Characteristics

 

 

 

 

10 V

 

 

20

Typical Transfer Characteristics

 

20

Pulse Test

 

 

 

5 V

 

 

V DS = 10 V

 

 

 

 

 

 

4 V

 

 

 

Pulse Test

(A)

16

3 V

(A)

16

 

 

 

 

 

D

 

 

D

 

75°C

I

12

 

12

 

 

I

 

DrainCurrent

4

VGS = 2.5 V

CurrentDrain

4

Tc = –25°C

 

8

 

 

8

25°C

 

 

 

 

 

 

2 V

 

 

 

0

2

4

6

8

10

 

 

 

 

 

 

 

 

 

 

0

1

2

3

4

5

 

Drain to Source Voltage

VDS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to Source Voltage

V GS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

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