2SK3155
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-768C (Z)
4th. Edition
Februaty 1999
Features
• Low on-resistance
R
DS
= 100 mΩ typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO–220FM
1. Gate
2. Drain
3. Source
D
G
S
2SK3155
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
150 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
15 A
Drain peak current I
D(pulse)
Note1
60 A
Body-drain diode reverse drain current I
DR
15 A
Avalanche current I
AP
Note3
15 A
Avalanche energy E
AR
Note3
16 mJ
Channel dissipation Pch
Note2
30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
150 — — V I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
±20——V I
G
= ±100 µA, V
DS
= 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16 V, V
DS
= 0
Zero gate voltege drain current I
DSS
——10µAV
DS
= 150 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 — 2.5 V I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state R
DS(on)
— 0.10 0.13 Ω I
D
= 8 A, V
GS
= 10 V
Note4
resistance R
DS(on)
— 0.12 0.15 Ω I
D
= 8 A, V
GS
= 4 V
Note4
Forward transfer admittance |y
fs
| 8.5 14 — S I
D
= 8 A, V
DS
= 10 V
Note4
Input capacitance Ciss — 850 — pF V
DS
= 10 V
Output capacitance Coss — 300 — pF V
GS
= 0
Reverse transfer capacitance Crss — 160 — pF f = 1 MHz
Turn-on delay time t
d(on)
— 13 — ns I
D
= 8 A, V
GS
= 10 V
Rise time t
r
— 100 — ns R
L
= 3.75 Ω
Turn-off delay time t
d(off)
— 195 — ns
Fall time t
f
— 110 — ns
Body–drain diode forward voltage V
DF
— 0.9 — V I
F
= 15 A, V
GS
= 0
Body–drain diode reverse
recovery time
t
rr
— 140 — ns I
F
= 15 A, V
= 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3155
3
Main Characteristics
40
30
20
10
0
50 100 150 200
200
100
20
2
10
0.1
0.3
1
3
10
300100
20
16
12
8
4
0
246810
20
16
12
8
4
0
12345
0.2
0.1
1
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
3.5 V
5 V
4 V
3 V
V = 2.5 V
GS
Pulse Test
10 V
Tc = –25°C
25°C
V = 10 V
Pulse Test
DS
75°C
500
0.5
5
50
0.05
30
1000
10 µs
1 ms
100 µs
DC Operation
(Tc = 25°C)
Ta = 25°C
Operation in
this area is
limited by R
DS(on)
PW = 10 ms(1shot)