HIT 2SK3153 Datasheet

2SK3153

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-733A (Z)

2nd. Edition

February 1999

Features

• Low on-resistance

R

DS

= 65 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

1

2

3

TO–220FM

1. Gate

2. Drain

3. Source

D

G

S

2SK3153

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

120 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

15 A

Drain peak current I

D(pulse)

Note1

60 A

Body-drain diode reverse drain current I

DR

15 A

Avalanche current I

AP

Note3

15 A

Avalanche energy E

AR

Note3

19 mJ

Channel dissipation Pch

Note2

30 W

Channel temperature Tch 150 °C

Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

120 — — V I

D

= 10 mA, V

GS

= 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100 µA, V

DS

= 0

Gate to source leak current I

GSS

——±10 µAV

GS

= ±16 V, V

DS

= 0

Zero gate voltege drain current I

DSS

——10µAV

DS

= 120 V, V

GS

= 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.5 V I

D

= 1 mA, V

DS

= 10 V

Static drain to source on state R

DS(on)

—6585mΩ I

D

= 8 A, V

GS

= 10 V

Note4

resistance R

DS(on)

— 80 110 mΩ I

D

= 8 A, V

GS

= 4 V

Note4

Forward transfer admittance |y

fs

| 8.5 14 — S I

D

= 8 A, V

DS

= 10 V

Note4

Input capacitance Ciss — 860 — pF V

DS

= 10 V

Output capacitance Coss — 360 — pF V

GS

= 0

Reverse transfer capacitance Crss — 195 — pF f = 1 MHz

Turn-on delay time t

d(on)

— 15 — ns I

D

= 8 A, V

GS

= 10 V

Rise time t

r

— 95 — ns R

L

= 3.75 Ω

Turn-off delay time t

d(off)

— 200 — ns

Fall time t

f

— 130 — ns

Body–drain diode forward voltage V

DF

— 0.9 — V I

F

= 15 A, V

GS

= 0

Body–drain diode reverse

recovery time

t

rr

— 100 — ns I

F

= 15 A, V

GS

= 0

diF/ dt = 50 A/ µs

Note: 4. Pulse test

2SK3153

3

Main Characteristics

40

30

20

0

50 100 150 200

0.1

0.3

1

10

30 100

50

40

30

20

10

0

246810

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

1000

300

100

30

10

1

0.3

0.1

3

3.5 V

3 V

10

V = 10 V

GS

5 V

4 V

2.5 V

20

16

12

8

4

0

12345

Tc = –25°C

25°C

75°C

V = 10 V

Pulse Test

DS

Pulse Test

3

300 1000

DC Operation

(Tc = 25°C)

PW = 10 ms

(1 shot)

10 µs

100 µs

1 ms

Operation in

this area is

limited by R

Ta = 25°C

DS(on)

4.5 V

6 V