HIT 2SK3153 Datasheet

0 (0)
2SK3153
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-733A (Z)
2nd. Edition
February 1999
Features
Low on-resistance
DS
= 65 m typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
1
2
3
TO–220FM
1. Gate
2. Drain
3. Source
D
G
S
2SK3153
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
120 V
Gate to source voltage V
GSS
±20 V
Drain current I
D
15 A
Drain peak current I
D(pulse)
Note1
60 A
Body-drain diode reverse drain current I
DR
15 A
Avalanche current I
Note3
15 A
Avalanche energy E
AR
Note3
19 mJ
Channel dissipation Pch
Note2
30 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
(BR)DSS
120 V I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
±20——V I
G
= ±100 µA, V
DS
= 0
Gate to source leak current I
GSS
——±10 µAV
GS
= ±16 V, V
DS
= 0
Zero gate voltege drain current I
DSS
——10µAV
DS
= 120 V, V
GS
= 0
Gate to source cutoff voltage V
GS(off)
1.0 2.5 V I
D
= 1 mA, V
DS
= 10 V
Static drain to source on state R
DS(on)
6585m I
D
= 8 A, V
GS
= 10 V
Note4
resistance R
DS(on)
80 110 m I
D
= 8 A, V
GS
= 4 V
Note4
Forward transfer admittance |y
fs
| 8.5 14 S I
D
= 8 A, V
DS
= 10 V
Note4
Input capacitance Ciss 860 pF V
DS
= 10 V
Output capacitance Coss 360 pF V
GS
= 0
Reverse transfer capacitance Crss 195 pF f = 1 MHz
Turn-on delay time t
d(on)
15 ns I
D
= 8 A, V
GS
= 10 V
Rise time t
r
95 ns R
L
= 3.75
Turn-off delay time t
d(off)
200 ns
Fall time t
f
130 ns
Body–drain diode forward voltage V
DF
0.9 V I
F
= 15 A, V
GS
= 0
Body–drain diode reverse
recovery time
t
rr
100 ns I
F
= 15 A, V
GS
= 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
2SK3153
3
Main Characteristics
40
30
20
0
50 100 150 200
0.1
0.3
1
10
30 100
50
40
30
20
10
0
246810
Channel Dissipation Pch (W)
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain Current I (A)
D
Typical Transfer Characteristics
1000
300
100
30
10
1
0.3
0.1
3
3.5 V
3 V
10
V = 10 V
GS
5 V
4 V
2.5 V
20
16
12
8
4
0
12345
Tc = –25°C
25°C
75°C
V = 10 V
Pulse Test
DS
Pulse Test
3
300 1000
DC Operation
(Tc = 25°C)
PW = 10 ms
(1 shot)
10 µs
100 µs
1 ms
Operation in
this area is
limited by R
Ta = 25°C
DS(on)
4.5 V
6 V
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