HIT 2SK3152 Datasheet

0 (0)
2SK3152
Silicon N Channel MOS FET High Speed Power Switching
Features
Low on-resistance
RDS = 100 m typ.
High speed switching
4 V gate drive device can be driven from 5 V source
Outline
ADE-208-732 (Z)
1st. Edition
February 1999
TO–220FM
G
D
1. Gate
2. Drain
1
2
3
S
3. Source
2SK3152
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V Gate to source voltage V Drain current I Drain peak current I Body-drain diode reverse drain current I Avalanche current I Avalanche energy E Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C
Note: 1. PW 10 µs, duty cycle 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg 50
Electrical Characteristics (Ta = 25°C)
120 V ±20 V 10 A 40 A 10 A 10 A
8.5 mJ 25 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V Gate to source breakdown voltage V Gate to source leak current I Zero gate voltege drain current I Gate to source cutoff voltage V Static drain to source on state R resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
120 V ID = 10 mA, VGS = 0 ±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0 ——10µAVDS = 120 V, VGS = 0
1.0 2.5 V ID = 1 mA, VDS = 10 V — 100 130 m ID = 5 A, VGS = 10 V
130 170 m ID = 5 A, VGS = 4 V Forward transfer admittance |yfs| 5.5 9.5 S ID = 5 A, VDS = 10 V Input capacitance Ciss 580 pF VDS = 10 V Output capacitance Coss 240 pF VGS = 0 Reverse transfer capacitance Crss 130 pF f = 1 MHz Turn-on delay time t Rise time t Turn-off delay time t Fall time t Body–drain diode forward voltage V Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
11 ns ID = 5 A, VGS = 10 V
55 ns RL = 6
140 ns
—80—ns
0.9 V IF = 10 A, VGS = 0
100 ns IF = 10 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SK3152
Power vs. Temperature Derating
40
30
20
10
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
20
10 V
16
D
6 V
4 V
12
Pulse Test
3.5 V
100
Maximum Safe Operation Area
30 10
D
PW =10 ms (1shot)
DC Operation (Tc = 25°C)
3 1
Operation in
0.3 this area is
Drain Current I (A)
limited by R
0.1
DS(on)
0.03 Ta = 25 °C
0.01
12
550
Drain to Source Voltage V (V)
Typical Transfer Characteristics
10
V = 10 V
DS
Pulse Test
8
D
6
10 20
1 ms
100 µs
DS
10 µs
100
200
8
Drain Current I (A)
4
0
246810
Drain to Source Voltage V (V)
3 V
V =2.5 V
GS
DS
4
2
0
Tc = 75°C
12345
Drain Current I (A)
Gate to Source Voltage V (V)
–25°C
25°C
GS
3
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