HIT 2SK3152 Datasheet

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2SK3152

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-732 (Z) 1st. Edition February 1999

Features

Low on-resistance RDS = 100 mΩ typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

TO–220FM

D

 

 

 

G

 

1.

Gate

 

 

 

 

2.

Drain

1

2

3.

Source

3

 

 

 

 

S

2SK3152

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

120

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

10

A

 

 

 

 

Drain peak current

Note1

40

A

ID(pulse)

Body-drain diode reverse drain current

IDR

10

A

Avalanche current

Note3

10

A

IAP

Avalanche energy

EAR Note3

8.5

mJ

 

 

 

 

Channel dissipation

Pch Note2

25

W

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

120

V

I

D = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

IGSS

±10

µA

 

 

VGS = ±16 V, VDS = 0

Zero gate voltege drain current

IDSS

10

µA

 

 

VDS = 120 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.5

V

I D = 1 mA, VDS = 10 V

Static drain to source on state

RDS(on)

100

130

m Ω

 

 

ID = 5

A, VGS = 10 VNote4

resistance

RDS(on)

130

170

m Ω

 

 

ID = 5

A, VGS = 4 V Note4

Forward transfer admittance

|yfs|

5.5

9.5

S

I D = 5

A, VDS = 10 V Note4

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

580

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

240

pF

V

 

GS = 0

Reverse transfer capacitance

Crss

130

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

11

ns

I

 

D = 5

A, VGS = 10 V

Rise time

tr

55

ns

R

L = 6 Ω

 

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

140

ns

 

 

 

 

Fall time

tf

80

ns

 

 

 

 

 

 

 

 

 

 

 

 

Body–drain diode forward voltage

VDF

0.9

V

I

F = 10 A, VGS = 0

Body–drain diode reverse

trr

100

ns

I

F = 10 A, VGS = 0

recovery time

 

 

 

 

 

 

 

diF/ dt = 50 A/ µs

Note: 4. Pulse test

2

HIT 2SK3152 Datasheet

2SK3152

Main Characteristics

Channel Dissipation Pch (W)

Power vs. Temperature Derating

40

 

 

 

 

 

 

 

 

 

(A)

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

I

20

 

 

 

 

 

 

 

 

 

CurrentDrain

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

50

100

150

 

200

 

 

Case Temperature

Tc (°C)

 

 

Maximum Safe Operation Area

100

 

 

 

 

 

 

 

 

 

10

 

 

30

 

 

 

 

 

 

 

 

 

µs

 

 

 

 

 

 

 

 

1

ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

PW

 

 

 

 

 

100

 

 

 

 

=10

 

 

 

µs

 

 

 

 

 

 

 

 

 

 

DC

 

ms

 

 

 

 

 

 

 

 

 

 

 

 

3

Operation

 

(1shot)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

(Tc

 

 

 

 

 

 

 

 

 

 

 

 

=

25°C)

 

 

 

 

 

0.3

Operation in

 

 

 

 

 

 

 

 

 

this area is

 

 

 

 

 

 

 

 

 

 

0.1

limited by R DS(on)

 

 

 

 

 

 

 

0.03

 

 

 

 

 

 

 

 

 

 

 

 

0.01

Ta = 25 °C

 

 

 

 

 

 

 

 

 

 

 

5

10

 

20

50

 

 

200

1

2

 

100

 

Drain to Source Voltage

V DS (V)

 

 

Typical Output Characteristics

 

Typical Transfer Characteristics

 

20

4 V

 

10

 

 

10 V

 

V DS = 10 V

 

 

 

 

 

 

 

6 V

Pulse Test

 

Pulse Test

 

(A)

16

 

(A)

8

 

 

3.5 V

 

 

D

 

D

 

 

12

 

6

 

I

 

I

 

DrainCurrent

4

 

DrainCurrent

2

 

 

8

3 V

 

4

 

 

 

 

 

 

 

 

 

 

Tc = 75°C

–25°C

 

 

VGS =2.5 V

 

 

 

 

 

 

 

 

25°C

0

2

4

6

8

10

0

1

2

3

4

5

 

Drain to Source Voltage

VDS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gate to Source Voltage

V GS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

3

+ 6 hidden pages