HIT 2SK3150(S), 2SK3150(L) Datasheet

Loading...

2SK3150(L), 2SK3150(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-750A (Z) 2nd. Edition February 1999

Features

Low on-resistance RDS = 45 mΩ typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

LDPAK

4

4

 

D

1

 

 

 

 

2

 

 

 

 

3

G

 

1 2

1.

Gate

 

 

3

 

 

 

2.

Drain

 

 

 

3.

Source

 

 

 

4.

Drain

 

S

 

 

 

2SK3150(L),2SK3150(S)

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Drain to source voltage

VDSS

100

V

Gate to source voltage

VGSS

±20

V

Drain current

ID

20

A

 

 

 

 

Drain peak current

Note1

60

A

ID(pulse)

Body-drain diode reverse drain current

IDR

20

A

Avalanche current

Note3

20

A

IAP

Avalanche energy

EAR Note3

40

mJ

Channel dissipation

Pch Note2

50

W

Channel temperature

Tch

150

°C

 

 

 

 

Storage temperature

Tstg

–55 to +150

°C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

 

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

100

V

I

D = 10 mA, VGS = 0

Gate to source breakdown voltage

V(BR)GSS

±20

V

I

G = ±100 µA, VDS = 0

Gate to source leak current

IGSS

±10

µA

 

 

VGS = ±16 V, VDS = 0

Zero gate voltege drain current

IDSS

10

µA

 

 

VDS = 100 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.0

2.5

V

I D = 1 mA, VDS = 10 V

Static drain to source on state

RDS(on)

45

60

m Ω

 

 

ID = 10

A, VGS = 10 VNote4

resistance

RDS(on)

65

85

m Ω

 

 

ID = 10

A, VGS = 4 V Note4

Forward transfer admittance

|yfs|

8.5

15

S

I D = 10

A, VDS = 10 V Note4

 

 

 

 

 

 

 

 

 

Input capacitance

Ciss

900

pF

V

DS = 10 V

 

 

 

 

 

 

 

 

 

 

Output capacitance

Coss

400

pF

V

GS = 0

 

 

 

 

 

 

 

 

 

Reverse transfer capacitance

Crss

210

pF

f = 1 MHz

 

 

 

 

 

 

 

 

 

Turn-on delay time

td(on)

15

ns

I

 

D = 10

A, VGS = 10 V

Rise time

tr

120

ns

R

L = 3 Ω

 

 

 

 

 

 

 

 

 

 

Turn-off delay time

td(off)

200

ns

 

 

 

 

Fall time

tf

150

ns

 

 

 

 

 

 

 

 

 

 

 

 

Body–drain diode forward voltage

VDF

0.9

V

I

F = 20 A, VGS = 0

Body–drain diode reverse

trr

90

ns

I

F = 20 A, VGS = 0

recovery time

 

 

 

 

 

 

 

diF/ dt

= 50A/ µs

Note: 4. Pulse test

2

HIT 2SK3150(S), 2SK3150(L) Datasheet

2SK3150(L),2SK3150(S)

Main Characteristics

Power vs. Temperature Derating

 

80

(W)

60

Pch

 

Dissipation

40

 

Channel

20

 

0

50

100

150

200

 

Case Temperature

Tc (°C)

 

 

20

Typical Output Characteristics

 

4 V

3.5 V

 

 

(A)

16

10 V

Pulse Test

 

 

6 V

 

D

 

 

 

 

 

I

12

 

 

CurrentDrain

 

 

 

 

3 V

 

 

 

 

8

 

 

 

4

 

VGS =2.5 V

 

 

 

0

2

4

6

8

10

 

 

 

 

 

 

Drain to Source Voltage

VDS (V)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Maximum Safe Operation Area

 

500

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(A)

100

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

D

 

 

 

 

 

 

 

 

 

 

µs

 

 

30

 

 

 

 

 

 

 

 

100

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

µs

 

 

Current

10

 

 

PW

 

 

 

 

ms

 

 

 

 

 

 

 

 

 

 

 

 

 

 

DC

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

=10

 

 

 

 

 

 

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Operation

 

ms

(1shot)

 

 

 

Drain

 

 

 

 

 

 

 

1

 

 

(Tc

 

 

 

 

 

 

 

 

=

 

 

 

 

Operation in

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0.3

this area is

 

 

 

 

25°C)

 

 

 

 

 

 

0.1

limited by R DS(on)

 

 

 

 

 

 

 

Ta = 25 °C

 

 

 

 

 

 

 

 

 

 

 

0.05

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

50 100 200

 

 

0.5

1

2

5

 

10

20

 

500

 

 

Drain to Source Voltage

 

V DS (V)

 

Typical Transfer Characteristics

20

V DS = 10 V

Pulse Test

(A)

16

 

 

 

 

 

 

 

 

 

 

 

D

12

 

 

 

 

 

I

 

 

 

 

 

 

 

 

 

 

 

Current

8

 

 

 

 

 

 

 

 

 

 

 

Drain

4

Tc = 75°C

 

–25°C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

25°C

 

 

0

1

2

3

4

5

 

 

Gate to Source Voltage

V GS (V)

 

3

+ 6 hidden pages