HIT 2SK3081 Datasheet

2SK3081

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-636A (Z) 3rd. Edition Jun 1998

Features

•Low on-resistance RDS(on) = 10mΩ typ.

•4V gate drive devices.

•High speed switching

Outline

TO–220AB

D
G
	1.	Gate
1	2.	Drain(Flange)
2	3.	Source
3
S

2SK3081

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	30	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	45	A
Drain peak current	Note1	180	A
	ID(pulse)
Body-drain diode reverse drain current	IDR	45	A
Channel dissipation	Pch Note2	75	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C
Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %
2. Value at Tc = 25°C
Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test Conditions
Drain to source breakdown voltage	V(BR)DSS	30	—	—	V	I		D = 10mA, VGS = 0
Gate to source breakdown voltage	V(BR)GSS	±20	—	—	V	I		G = ±100µA, VDS = 0
Zero gate voltege drain current	IDSS	—	—	10	µA			VDS = 30 V, VGS = 0
Gate to source leak current	IGSS	—	—	±10	µA			VGS = ±16V, VDS = 0
Gate to source cutoff voltage	VGS(off)	1.0	—	2.0	V	I D			= 1mA, VDS = 10V
Static drain to source on state	RDS(on)	—	10	14	m Ω			ID	= 20A, VGS = 10V Note3
resistance
Static drain to source on state	RDS(on)	—	15	25	m Ω			ID	= 20A, VGS = 4V Note3
resistance
Forward transfer admittance	|yfs|	20	30	—	S	I D			= 20A, VDS = 10V Note3
Input capacitance	Ciss	—	1570	—	pF	V		DS = 10V
Output capacitance	Coss	—	1100	—	pF	V		GS = 0
Reverse transfer capacitance	Crss	—	410	—	pF	f = 1MHz
Turn-on delay time	td(on)	—	32	—	ns	V		GS = 10V, ID = 20A
Rise time	tr	—	300	—	ns	R		L	= 0.5Ω
Turn-off delay time	td(off)	—	180	—	ns
Fall time	tf	—	200	—	ns
Body–drain diode forward voltage	VDF	—	1.0	—	V	I		F = 45A, VGS = 0
Body–drain diode reverse	trr	—	75	—	ns	I		F = 45A, VGS = 0
recovery time								diF/ dt =50A/µs

Note: 3. Pulse test

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2SK3081

Main Characteristics

Channel Dissipation Pch (W)

100	Power vs. Temperature Derating				1000		Maximum Safe Operation Area
				(A)	300							10 µs
75					100								100
				D
											1					µs
				I	30					PW			ms
				Current					DC		=
												10
									(Tc
							Operation in
50					10					Operation=
														ms
				Drain	3						25°C)
25					1		limited by R DS(on)
							this area is
					0.3	Ta = 25°C
0					0.1	1 shot pulse
	50	100	150	200	0.1		0.3	1	3			10				30	100
	Case Temperature		Tc (°C)			Drain to Source Voltage									V DS (V)

	Typical Output Characteristics
	10 V	8 V
	100	6 V
			Pulse Test
	80	5 V
(A)			4.5 V	(A)
D	60		4 V	D
I				I
DrainCurrent	20		3 V	DrainCurrent
	40		3.5 V
			VGS = 2.5 V

100

80

60

40

20

Typical Transfer Characteristics

Tc = –25°C	25°C
	75°C

V DS = 10 V

Pulse Test

0	2	4	6	8			10														0		2	4	6	8	10
	Drain to Source Voltage			VDS (V)																			Gate to Source Voltage			V GS (V)

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