HIT 2SK3070-S, 2SK3070-L Datasheet

2SK3070(L),2SK3070(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-684G (Z) 8th. Edition February 1999

Features

•Low on-resistance RDS(on) = 4.5 mΩ typ.

•Low drive current

•4 V gate drive device can be driven from 5 V source

Outline

LDPAK

4

4

	D
	1	2
		3
G	1 2	1.	Gate
	3
		2.	Drain
		3.	Source
		4.	Drain
	S

Datasheet Title

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	40	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	75	A
Drain peak current	Note1	300	A
	ID(pulse)
Body-drain diode reverse drain current	IDR	75	A
Avalanche current	Note3	50	A
	IAP
Avalanche energy	Note3	333	mJ
	EAR
Channel dissipation	Pch Note2	100	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50 Ω

2

Datasheet Title

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage

V(BR)DSS

40

—

—

V

I

D = 10 mA, VGS = 0

Gate to source leak current

IGSS

—

—

±0.1

µA

VGS = ±20 V, VDS = 0

Zero gate voltege drain current

IDSS

—

—

10

µA

VDS = 40

V, VGS = 0

Gate to source cutoff voltage

V

1.0

—

2.5

V

I

D

= 1 mA, V

DS

= 10 V Note1

GS(off)

Static drain to source on state

RDS(on)

—

4.5

5.8

m Ω

ID = 40 A, VGS = 10 V Note1

resistance

—

6.5

10

m Ω

ID = 40 A, VGS = 4 V Note1

Forward transfer admittance

|yfs|

50

80

—

S

I D = 40 A, VDS = 10 V Note1

Input capacitance

Ciss

—

6800

—

pF

V

DS = 10

V

Output capacitance

Coss

—

1300

—

pF

V

GS = 0

Reverse transfer capacitance

Crss

—

380

—

pF

f = 1 MHz

Total gate charge

Qg

—

130

—

nc

V

DD = 25

V

Gate to source charge

Qgs

—

25

—

nc

V

GS = 10

V

Gate to drain charge

Qgd

—

30

—

nc

I

D = 75 A

Turn-on delay time

td(on)

—

60

—

ns

V

GS = 10

V, ID = 40 A

Rise time

tr

—

300

—

ns

R

L = 0.75 Ω

Turn-off delay time

td(off)

—

550

—

ns

Fall time

tf

—

400

—

ns

Body–drain diode forward voltage

VDF

—

1.05

—

V

I

F = 75 A, VGS = 0

Body–drain diode reverse

trr

—

90

—

ns

I

F = 75 A, VGS = 0

recovery time

diF/ dt = 50 A/ µs

Note: 1. Pulse test

3