HIT 2SK2959 Datasheet

2SK2959

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-569C (Z) 4th. Edition Aug 1998

Features

•Low on-resistance RDS(on) = 7mΩ typ.

•4V gate drive devices.

•High speed switching

Outline

TO–220AB

D
G
	1.	Gate
1	2.	Drain(Flang
2	3.	Source
3
S

2SK2959

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	30	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	50	A
Drain peak current	Note1	200	A
	ID(pulse)
Body-drain diode reverse drain current	IDR	50	A
Channel dissipation	Pch Note2	75	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test Conditions
Drain to source breakdown voltage	V(BR)DSS	30	—	—	V	I		D = 10mA, VGS = 0
Gate to source breakdown voltage	V(BR)GSS	±20	—	—	V	I		G = ±100µA, VDS = 0
Zero gate voltege drain current	IDSS	—	—	10	µA			VDS = 30 V, VGS = 0
Gate to source leak current	IGSS	—	—	±10	µA			VGS = ±16V, VDS = 0
Gate to source cutoff voltage	VGS(off)	1.0	—	2.0	V	I D = 1mA, VDS = 10V
Static drain to source on state	RDS(on)	—	7.0	10	m Ω			ID = 25A, VGS = 10V Note3
resistance
Static drain to source on state	RDS(on)	—	12	18	m Ω			ID = 25A, VGS = 4V Note3
resistance
Forward transfer admittance	|yfs|	25	45	—	S	I D = 25A, VDS = 10V Note3
Input capacitance	Ciss	—	2000	—	pF	V		DS = 10V
Output capacitance	Coss	—	1500	—	pF	V		GS = 0
Reverse transfer capacitance	Crss	—	350	—	pF	f = 1MHz
Turn-on delay time	td(on)	—	20	—	ns	V		GS = 10V, ID = 25A
Rise time	tr	—	330	—	ns	R		L = 0.4Ω
Turn-off delay time	td(off)	—	190	—	ns
Fall time	tf	—	190	—	ns
Body–drain diode forward voltage	VDF	—	0.95	—	V	I		F = 50A, VGS = 0
Body–drain diode reverse	trr	—	60	—	ns	I		F = 50A, VGS = 0
recovery time								diF/ dt =50A/µs

Note: 3. Pulse test

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2SK2959

Main Characteristics

Power vs. Temperature Derating

Maximum Safe Operation Area

	100						1000
(W)							300									10 µs
	75					(A)	100			PW						100
Pch						D												µs
												=			1
						I
							30						10			ms
										DC				ms
DissipationChannel						DrainCurrent										(1
							0.3					Operation=					shot)
	50						10			(Tc
							3	Operation in						25°C)
								this area is
	25						1	limited by R DS(on)
							0.1	Ta = 25°C
	0	50	100	150	200		0.1	0.3	1		3					10			30	100
		Case Temperature		Tc (°C)				Drain to Source Voltage								V			(V)
																		DS

Typical Output Characteristics	Typical Transfer Characteristics
10 V 5 V

	50				50
		4 V	Pulse Test			VDS = 10 V
	40	3.5 V			40	Pulse Test
(A)				(A)
			3 V
D	30			D
I					30
DrainCurrent				I
	10			DrainCurrent	10	25°C
	20				20
			2.5 V			75°C
						Tc = –25°C
			VGS = 2 V

0	2	4	6	8	10					0												1	2	3	4	5
	Drain to Source Voltage V			(V)																		Gate to Source Voltage V			GS(V)
				DS

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