HIT 2SK2958-S, 2SK2958-L Datasheet

2SK2958(L),2SK2958(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-568B (Z) 3rd. Edition Jun 1998

Features

•Low on-resistance RDS(on) = 5.5mΩ typ.

•4V gate drive devices.

•High speed switching

Outline

LDPAK

4

4

D

		1
		2
		3
G	1
	2	1.	Gate
	3
		2.	Drain
		3.	Source
	S	4.	Drain

2SK2958(L),2SK2958(S)

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	30	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	75	A
Drain peak current	Note1	300	A
	ID(pulse)
Body-drain diode reverse drain current	IDR	75	A
Channel dissipation	Pch Note2	100	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test Conditions
Drain to source breakdown voltage	V(BR)DSS	30	—	—	V	I		D = 10mA, VGS = 0
Gate to source breakdown voltage	V(BR)GSS	±20	—	—	V	I		G = ±100µA, VDS = 0
Zero gate voltege drain current	IDSS	—	—	10	µA			VDS = 30 V, VGS = 0
Gate to source leak current	IGSS	—	—	±10	µA			VGS = ±16V, VDS = 0
Gate to source cutoff voltage	VGS(off)	1.0	—	2.0	V	I D = 1mA, VDS = 10V
Static drain to source on state	RDS(on)	—	5.5	7.0	m Ω			ID = 40A, VGS = 10V Note3
resistance
Static drain to source on state	RDS(on)	—	9.0	14.0	m Ω			ID = 40A, VGS = 4V Note3
resistance
Forward transfer admittance	|yfs|	35	60	—	S	I D = 40A, VDS = 10V Note3
Input capacitance	Ciss	—	4100	—	pF	V		DS = 10V
Output capacitance	Coss	—	2700	—	pF	V		GS = 0
Reverse transfer capacitance	Crss	—	800	—	pF	f = 1MHz
Turn-on delay time	td(on)	—	45	—	ns	V		GS = 10V, ID = 40A
Rise time	tr	—	430	—	ns	R		L = 0.25Ω
Turn-off delay time	td(off)	—	460	—	ns
Fall time	tf	—	440	—	ns
Body–drain diode forward voltage	VDF	—	1.0	—	V	I		F = 75A, VGS = 0
Body–drain diode reverse	trr	—	90	—	ns	I		F = 75A, VGS = 0
recovery time								diF/ dt =50A/µs

Note: 3. Pulse test

2

2SK2958(L),2SK2958(S)

Main Characteristics

Channel Dissipation Pch (W)

Power vs. Temperature Derating

Maximum Safe Operation Area

160						1000
						300										10
														100		µs
120					(A)	100			PW							µs
													1
					D					=
											10			ms
					I	30			DC			ms
														(1
					Current					Operation=					shot)
80						10				(Tc
							Operation in					25°C)
						3
					Drain		this area is
40						1	limited by R DS(on)
						0.3
						0.1	Ta = 25°C
0	50	100	150	200		0.1	0.3	1		3				10		30	100
	Case Temperature		Tc (°C)				Drain to Source Voltage							V		DS(V)

		Typical Output Characteristics
	100	VGS = 10 V
			Pulse Test
	80	6 V
(A)		5 V
			3.5 V
		4 V
D
	60
I
Current	40		3 V
Drain
	20
			2.5 V

0	2	4	6	8	10
	Drain to Source Voltage V			(V)
				DS

Drain Current I D (A)

Typical Transfer Characteristics

100
			VDS = 10 V
80			Pulse Test
60
40															25°C
								75°C
20
													Tc = –25°C
0
		1						2			3		4					5
			Gate to Source Voltage										V GS(V)

3