HIT 2SK2937 Datasheet

2SK2937

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-560C (Z) 4th. Edition Jun 1998

Features

•Low on-resistance RDS =0.026 Ω typ.

•High speed switching

•4V gate drive device can be driven from 5V source

Outline

TO–220FM

D
G		1.	Gate
		2.	Drain
1	2	3.	Source
		3

S

2SK2937

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Drain to source voltage	VDSS	60	V
Gate to source voltage	VGSS	±20	V
Drain current	ID	25	A
Drain peak current	Note1	100	A
	ID(pulse)
Body-drain diode reverse drain current	IDR	25	A
Avalanche current	Note3	20	A
	IAP
Avalanche energy	EAR Note3	34	mJ
Channel dissipation	Pch Note2	25	W
Channel temperature	Tch	150	°C
Storage temperature	Tstg	–55 to +150	°C

Note: 1. PW ≤ 10µs, duty cycle ≤ 1 %

2.Value at Tc = 25°C

3.Value at Tch = 25°C, Rg ≥ 50Ω

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2SK2937

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit			Test Conditions
Drain to source breakdown voltage	V(BR)DSS	60	—	—	V	I		D = 10mA, VGS = 0
Gate to source breakdown voltage	V(BR)GSS	±20	—	—	V	I		G = ±100µA, VDS = 0
Gate to source leak current	IGSS	—	—	±10	µA			VGS = ±16V, VDS = 0
Zero gate voltege drain current	IDSS	—	—	10	µA			VDS = 60 V, VGS = 0
Gate to source cutoff voltage	VGS(off)	1.5	—	2.5	V	I D = 1mA, VDS = 10V
Static drain to source on state	RDS(on)	—	0.026	0.034	Ω			ID = 15A, VGS = 10VNote4
resistance	RDS(on)	—	0.045	0.070	Ω			ID = 15A, VGS = 4V Note4
Forward transfer admittance	|yfs|	11	17	—	S	I D = 15A, VDS = 10V Note4
Input capacitance	Ciss	—	740	—	pF	V		DS = 10V
Output capacitance	Coss	—	380	—	pF	V		GS = 0
Reverse transfer capacitance	Crss	—	140	—	pF	f = 1MHz
Turn-on delay time	td(on)	—	10	—	ns	I		D = 15A, VGS = 10V
Rise time	tr	—	160	—	ns	R		L = 2Ω
Turn-off delay time	td(off)	—	100	—	ns
Fall time	tf	—	150	—	ns
Body–drain diode forward voltage	VDF	—	0.95	—	V	I		F = 25A, VGS = 0
Body–drain diode reverse	trr	—	40	—	ns	I		F = 25A, VGS = 0
recovery time								diF/ dt =50A/µs

Note: 4. Pulse test

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