HIT 2SC4308 Datasheet
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2SC4308
Silicon NPN Epitaxial Planar
Application
VHF Wide band amplifier
Outline
TO-92 (2)
1. Base
2. Emitter
3. Collector
3
2
1
2SC4308
Absolute Maximum Ratings (Ta = 25°C)
Item |
Symbol |
Ratings |
Unit |
Collector to base voltage |
VCBO |
30 |
V |
Collector to emitter voltage |
VCEO |
20 |
V |
Emitter to base voltage |
VEBO |
3 |
V |
Collector current |
IC |
300 |
mA |
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Collector peak current |
iC (peak) |
500 |
mA |
Collector power dissipation |
PC |
600 |
mW |
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Junction temperature |
Tj |
150 |
°C |
Storage temperature |
Tstg |
–55 to +150 |
°C |
Electrical Characteristics (Ta = 25°C)
Item |
Symbol |
Min |
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Typ |
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Max |
Unit |
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Test conditions |
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Collector to base breakdown |
V(BR)CBO |
30 |
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— |
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— |
V |
I |
C = 100 A, IE = 0 |
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voltage |
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Collector to emitter breakdown |
V(BR)CEO |
20 |
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— |
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— |
V |
I |
C = 1 mA, RBE = ∞ |
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voltage |
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Collector cutoff current |
ICBO |
— |
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— |
1 |
A |
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VCB = |
25 V, IE = 0 |
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Emitter cutoff current |
IEBO |
— |
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— |
10 |
A |
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VEB = |
3 |
V, IE = 0 |
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DC current transfer ratio |
hFE |
50 |
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— |
200 |
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V CE = |
5 |
V, IC = 50 mA |
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Gain bandwidth product |
fT |
1.5 |
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2.5 |
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— |
GHz |
V CE = |
5 |
V, IC = 50 mA |
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Collector output capacitance |
Cob |
— |
4.0 |
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— |
pF |
V |
CB = |
10 V, IE = 0, f = 1 MHz |
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