HIT 2SC4308 Datasheet

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HIT 2SC4308 Datasheet

2SC4308

Silicon NPN Epitaxial Planar

Application

VHF Wide band amplifier

Outline

TO-92 (2)

1. Base

2. Emitter

3. Collector

3

2

1

2SC4308

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

30

V

Collector to emitter voltage

VCEO

20

V

Emitter to base voltage

VEBO

3

V

Collector current

IC

300

mA

 

 

 

 

Collector peak current

iC (peak)

500

mA

Collector power dissipation

PC

600

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

 

 

 

Typ

 

 

 

 

 

Max

Unit

 

Test conditions

Collector to base breakdown

V(BR)CBO

30

 

 

 

 

 

 

 

 

 

 

 

V

I

C = 100 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector to emitter breakdown

V(BR)CEO

20

 

 

 

 

 

 

 

 

 

 

 

V

I

C = 1 mA, RBE =

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICBO

 

 

1

A

 

VCB =

25 V, IE = 0

Emitter cutoff current

IEBO

 

 

10

A

 

VEB =

3

V, IE = 0

DC current transfer ratio

hFE

50

 

 

 

 

 

 

 

200

 

V CE =

5

V, IC = 50 mA

Gain bandwidth product

fT

1.5

 

 

 

 

2.5

 

 

 

 

 

GHz

V CE =

5

V, IC = 50 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector output capacitance

Cob

4.0

 

 

 

 

pF

V

CB =

10 V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

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