HIT 2SC4260 Datasheet

2SC4260

Silicon NPN Epitaxial

Application

UHF frequency converter, Wide band amplifier

Outline

1

2

3

1. Emitter

2. Base

3. Collector

CMPAK

2SC4260

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Collector to base voltage V

CBO

25 V

Collector to emitter voltage V

CEO

13 V

Emitter to base voltage V

EBO

3V

Collector current I

C

50 mA

Collector power dissipation P

C

100 mW

Junction temperature Tj 150 °C

Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions

Collector to base breakdown

voltage

V

(BR)CBO

25——V I

C

= 10 µA, I

E

= 0

Collector cutoff current I

CBO

— — 0.1 µAV

CB

= 15 V, I

E

= 0

I

CEO

——10µAV

CE

= 13 V, R

BE

= ∞

Emitter cutoff current I

EBO

— — 0.3 µAV

EB

= 3 V, I

C

= 0

Collector to emitter saturation

voltage

V

CE(sat)

— — 0.3 V I

C

= 20 mA, I

B

= 4 mA

DC current transfer ratio h

FE

50 — 180 V

CE

= 5 V, I

C

= 5 mA

Collector output capacitance Cob — 0.85 1.3 pF V

CB

= 10 V, I

E

= 0, f = 1MHz

Gain bandwidth product f

T

3.0 3.8 — GHz V

CE

= 5 V, I

C

= 5 mA

Conversion gain CG — 19 — dB V

CC

= 5 V, I

C

= 0.8 mA,

f = 900 MHz

Noise figure NF — 8 — dB f

OSC

= 930 MHz (–5dBm),

f

out

= 30 MHz

Note: Marking is “TI–”.

See characteristic curves of 2SC4197.