HIT 2SC4260 Datasheet

Loading...
2SC4260
Silicon NPN Epitaxial
Application
UHF frequency converter, Wide band amplifier
Outline
1
2
3
1. Emitter
2. Base
CMPAK
2SC4260
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
25 V
Collector to emitter voltage V
CEO
13 V
Emitter to base voltage V
EBO
3V
Collector current I
C
50 mA
Collector power dissipation P
C
100 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
25——V I
C
= 10 µA, I
E
= 0
Collector cutoff current I
CBO
0.1 µAV
CB
= 15 V, I
E
= 0
I
CEO
——10µAV
CE
= 13 V, R
BE
=
Emitter cutoff current I
EBO
0.3 µAV
EB
= 3 V, I
C
= 0
Collector to emitter saturation
voltage
V
CE(sat)
0.3 V I
C
= 20 mA, I
B
= 4 mA
DC current transfer ratio h
FE
50 180 V
CE
= 5 V, I
C
= 5 mA
Collector output capacitance Cob 0.85 1.3 pF V
CB
= 10 V, I
E
= 0, f = 1MHz
Gain bandwidth product f
T
3.0 3.8 GHz V
CE
= 5 V, I
C
= 5 mA
Conversion gain CG 19 dB V
CC
= 5 V, I
C
= 0.8 mA,
f = 900 MHz
Noise figure NF 8 dB f
OSC
= 930 MHz (–5dBm),
f
out
= 30 MHz
Note: Marking is “TI–”.
See characteristic curves of 2SC4197.
+ 3 hidden pages