HIT 2SC4126 Datasheet

2SC4126

Silicon NPN Epitaxial

Application

VHF and UHF wide band amplifier

Outline

MPAK-4

2

3

1

1. Collector

4

2. Emitter

3. Base

4. Emitter

2SC4126

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	15	V
Collector to emitter voltage	VCEO	11	V
Emitter to base voltage	VEBO	2	V
Collector current	IC	50	mA
Collector power dissipation	PC	150	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	15	—	—	V	I C = 10 A, IE = 0
voltage
Collector cutoff current	ICBO	—	—	1	A	VCB = 12 V, IE = 0
	ICEO	—	—	1	A	VCE = 10 V, RBE = ∞
Emitter cutoff current	IEBO	—	—	1	A	VEB = 1	V, IC = 0
DC current transfer ratio	hFE	50	—	250		V CE = 5	V, IC = 20 mA
Collector output capacitance	Cob	—	1.0	1.5	pF	V CB = 5	V, IE = 0, f = 1 MHz
Gain bandwidth product	fT	4.5	6.0	—	GHz	V CE = 5	V, IC = 20 mA
Power gain	PG	9.0	11.0	—	dB	V CE = 5	V, IC = 20 mA,
						f = 900 MHz
Noise figure	NF	—	1.5	3.0	dB	V CE = 5	V, IC = 5 mA,
						f = 900 MHz

Note: Marking is “MI–”.

2

Collector Power Dissipation PC (mW)

DC Current Transfer Ratio hFE

150

100

50

0

200

160

120

80

40

0

Maximum Collector Dissipation Curve

50 100 150 Ambient Temperature Ta (°C)

DC Current Transfer Ratio vs.

Collector Current

VCE = 5 V

Pulse

1	2	5	10	20	50
	Collector Current			IC (mA)

2SC4126

				Typical Output Characteristics
	20
				Pulse
(mA)	16			150
				125
C
I	12
Current				100
	8			75
Collector
			I	B = 25 μ					A
	4
				50
	0		2							4			6					8									10
			Collector to Emitter Voltage VCE (V)
			Gain Bandwidth Product vs. Collector
										Current
	10
(GHz)	8																		VCE = 5 V
T
f
Product	6
Bandwidth
	4
Gain	2
	0
	1		2							5			10					20									50
				Collector Current														IC (mA)

3