HIT 2SC4050 Datasheet

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2SC4050
Silicon NPN Epitaxial
Application
Low frequency amplifier, switching
Outline
1
2
3
1. Emitter
2. Base
MPAK
2SC4050
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage V
CBO
120 V
Collector to emitter voltage V
CEO
120 V
Emitter to base voltage V
EBO
5V
Collector current I
C
100 mA
Collector power dissipation P
C
150 mW
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage
V
(BR)CBO
120 V I
C
= 10 µA, I
E
= 0
Collector to emitter breakdown
voltage
V
(BR)CEO
120 V I
C
= 1 mA, R
BE
=
Emitter to base breakdown
voltage
V
(BR)EBO
5 ——V I
E
= 10 µA, I
C
= 0
Collector cutoff current I
CBO
0.1 µAV
CB
= 70 V, I
E
= 0
Emitter cutoff current I
EBO
0.1 µAV
EB
= 2 V, I
C
= 0
DC current transfer ratio h
FE
*
1
250 800 V
CE
= 12 V, I
C
= 2 mA*
2
Collector to emitter saturation
voltage
V
CE(sat)
0.1 V I
C
= 10 mA, I
B
= 1 mA*
2
Base to emitter saturation
voltage
V
BE(sat)
1.1 V I
C
= 10 mA, I
B
= 1 mA*
2
Notes: 1. The 2SC4050 is grouped by h
FE
as follows.
2. Pluse test
Grade D E
Mark KID KIE
h
FE
250 to 500 400 to 800
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