HIT 2SC3513 Datasheet

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HIT 2SC3513 Datasheet

2SC3513

Silicon NPN Epitaxial

Application

UHF / VHF wide band amplifier

Outline

MPAK

3

 

1

Emitter

 

1.

2

2.

Base

3.

Collector

 

2SC3513

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

15

V

Collector to emitter voltage

VCEO

11

V

Emitter to base voltage

VEBO

2

V

Collector current

IC

50

mA

 

 

 

 

Collector power dissipation

PC

150

mW

 

 

 

 

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Electrical Characteristics (Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

 

Test conditions

Collector to base breakdown

V(BR)CBO

15

V

I

C = 10 A, IE = 0

voltage

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector cutoff current

ICEO

1

A

 

VCE = 10 V, RBE =

Emitter cutoff current

IEBO

1

A

 

VEB = 1

V, IC = 0

Collector cutoff current

ICBO

1

A

 

VCB = 12 V, IE = 0

DC current transfer ratio

hFE

50

120

250

 

 

VCE = 5

V, IC = 20 mA

Collector output capacitance

Cob

1.0

1.5

pF

V CB = 5

V, IE = 0, f = 1 MHz

 

 

 

 

 

 

 

 

 

Gain bandwidth product

fT

6.0

GHz

V

CE = 5

V, IC = 20 mA

Power gain

PG

10

dB

V

CE = 5

V, IC = 20 mA,

 

 

 

 

 

 

 

f = 900 MHz

 

 

 

 

 

 

 

 

 

Noise figure

NF

1.6

dB

V

CE = 5

V, IC = 5 mA,

 

 

 

 

 

 

 

f = 900 MHz

Note: Marking is “IS–”.

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