HIT 2SC3391 Datasheet

2SC3391

Silicon NPN Epitaxial Planar

ADE-208-1084 (Z) 1st. Edition Mar. 2001

Application

VHF amplifier, Mixer, Local oscillator

Outline

SPAK

1 2 3	1.	Emitter
	2.	Collector
	3.	Base

2SC3391

Absolute Maximum Ratings (Ta = 25°C)

Item	Symbol	Ratings	Unit
Collector to base voltage	VCBO	30	V
Collector to emitter voltage	VCEO	20	V
Emitter to base voltage	VEBO	4	V
Collector current	IC	20	mA
Collector power dissipation	PC	200	mW
Junction temperature	Tj	150	°C
Storage temperature	Tstg	–55 to +150	°C

Electrical Characteristics (Ta = 25°C)

Item	Symbol	Min	Typ	Max	Unit	Test conditions
Collector to base breakdown	V(BR)CBO	30	—	—	V	I	C = 10 µA, IE = 0
voltage
Collector to emitter breakdown	V(BR)CEO	20	—	—	V	I	C = 1 mA, RBE = ∞
voltage
Emitter to base breakdown	V(BR)EBO	4	—	—	V	I	E = 10 µA, IC = 0
voltage
Collector cutoff current	ICBO	—	—	0.5	µA	VCB =			10 V, IE = 0
DC current transfer ratio	h *1	60	—	200		V	CE	=	6	V, I =	1 mA
	FE									C
Base to emitter voltage	VBE	—	0.72	—	V	V	CE =		6	V, IC =	1 mA
Collector to emitter saturation	VCE(sat)	—	0.17	—	V	I	C = 20 mA, IB = 4 mA
voltage
Gain bandwidth product	fT	450	940	—	MHz	V CE =			6	V, IC =	5 mA
Collector output capacitance	Cob	—	0.9	1.2	pF	V CB =			10 V, IE = 0, f = 1 MHz
Power gain	PG	17	20	—	dB	V CE =			6	V, IC =	1 mA,
						f = 100 MHz
Noise figure	NF	—	3.5	5.5	dB	V CE =			6	V, IC =	1 mA,
						Rg = 50 Ω, f = 100 MHz

Note: 1. The 2SC3391 is grouped by hFE as follows.

B	C
60 to 120	100 to 200

See characteristic curves of 2SC535.

2