HIT 2SC2979 Datasheet

2SC2979

Silicon NPN Triple Diffused

Application

High voltage, high speed and high power switching

Outline

TO-220AB

		1.	Base
		2.	Collector
	1		(Flange)
		3.	Emitter
	2
		3

Absolute Maximum Ratings (Ta = 25°C)

Item

Symbol

Ratings

Unit

Collector to base voltage

VCBO

900

V

Collector to emitter voltage

VCEO

800

V

Emitter to base voltage

VEBO

7

V

Collector current

IC

3

A

Collector peak current

IC(peak)

6

A

Base current

IB

1.5

A

Collector power dissipation

PC*1

40

W

Junction temperature

Tj

150

°C

Storage temperature

Tstg

–55 to +150

°C

Note: 1. Value at TC = 25°C.

2SC2979

Electrical Characteristics (Ta = 25°C)

Item	Symbol		Min	Typ	Max		Unit		Test conditions
Collector to emitter sustain	VCEO(sus)		800	—	—	V	I		C = 0.2 A, RBE = ∞, L = 100
voltage									mH
	VCEX(sus)		800	—	—	V	I		C = 3 A, IB1 = 0.9 A, IB2 = –0.6
									A, VBE = –5.0 V, L = 180 H,
									Clamped
Emitter to base breakdown	V(BR)EBO		7	—	—	V	I		E = 10 mA, IC = 0
voltage
Collector cutoff current	ICBO		—	—	100		A		VCB = 750 V, IE = 0
	ICEO		—	—	100		A		VCE = 650 V, RBE = ∞
DC current transfer ratio	h	FE1	15	—	—		V		CE	= 5 V, I = 0.3 A*1
										C
	h	FE2	7	—	—		V		CE	= 5 V, I = 1.5 A*1
										C
Collector to emitter saturation	VCE(sat)		—	—	1.0	V	I		C = 0.75 A, IB = 0.15 A*1
voltage
Base to emitter saturation	VBE(sat)		—	—	1.5	V
voltage
Turn on time	ton		—	—	1.0		s		IC = 1.5 A, IB1 = 0.3 A,
									IB2 = –0.75 A, VCC 250 V
Storage time	tstg		—	—	3.0		s
Fall time	tf		—	—	1.0		s
Note: 1. Pulse test

Maximum Collector Dissipation

Curve

	60
(W)
C
P
dissipation	40
Collector power	20
	0	50	100	150
		Case temperature TC (°C)

Area of Safe Operation

	10
	3	iC(peak)				25
						μ
						50	s
	ICmax(Continuous)				250 μ
(A)
	1.0				1	s
						μ
C				PW ms s
I	0.3			DC	=
current				T
				C	10
				=
				25	ms
	0.1			Operation
				°
				C
Collector	0.03	Ta = 25°C, 1 Shot
	0.01
	0.003
	0.001	3	10	30	100	300	1,000
	1
		Collector to emitter voltage				VCE (V)

2

2SC2979

		Collector Current Derating Rate
	100					°C/W)
(%)
rate	80		IS/B			(
						c
						θ
				Limit		-j
deratingcurrentCollector					Area	resistanceThermal
	60
	40
	20
	0	50		100		150
		Case temperature TC (°C)

Transient Thermal Resistance

10
3
													–10		s
									10 ms
1.0
0.3
													10	ms
												–
											s
											μ
0.1									10
0.03
0.01																		TC = 25°C
0.01								0.1							1.0										10		(s)
0.01								0.1							1.0										10		(ms)
											Time				t

		Reverse Bias Area of Safe Operation					(V)
	10
							(BR)CER
(A)	8
							V
C							emittertoCollectorvoltage
Collectorcurrent I	6			600 V, 6 A
	4
					800 V, 3 A
	2	IB2 = –0.6 A			850 V, 1.0 A
	0	200	400	600	800	1,000
		Collector to emitter voltage			VCE (V)

Collector to Emitter Voltage vs. Base to Emitter Resistance

1,000

IC = 1 mA

900

800

700		10 k	100 k	1 M
100	1 k

Base to emitter resistance RBE (Ω)

3